X-On Electronics has gained recognition as a prominent supplier of RQ5H020SPTL mosfet across the USA, India, Europe, Australia, and various other global locations. RQ5H020SPTL mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RQ5H020SPTL ROHM

RQ5H020SPTL electronic component of ROHM
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See Product Specifications
Part No.RQ5H020SPTL
Manufacturer: ROHM
Category:MOSFET
Description: ROHM Semiconductor MOSFET
Datasheet: RQ5H020SPTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2285 ea
Line Total: USD 1.14

Availability - 1081
Ships to you between
Fri. 21 Jun to Wed. 26 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1081 - WHS 1


Ships to you between
Fri. 21 Jun to Wed. 26 Jun

MOQ : 5
Multiples : 5
5 : USD 0.2285
50 : USD 0.186
150 : USD 0.1678
500 : USD 0.145
3000 : USD 0.1349
6000 : USD 0.1288

9816 - WHS 2


Ships to you between Thu. 20 Jun to Mon. 24 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5348
10 : USD 0.4669
100 : USD 0.3531
500 : USD 0.2852
1000 : USD 0.2265
3000 : USD 0.2081
9000 : USD 0.1909
24000 : USD 0.1875
45000 : USD 0.184

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Product
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the RQ5H020SPTL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ5H020SPTL and other electronic components in the MOSFET category and beyond.

RQ5H020SP Pch -45V -2.0A Power MOSFET Datasheet Outline V 45V DSS TSMT3 (3) R (Max.) 190m DS(on) (1) I 2.0A D P 1.0W D (2) Features Inner circuit (3) 1) Low on - resistance. 2) Built-in G-S Protection Diode. (1) Gate (2) Source 1 3) Small Surface Mount Package (TSMT3). (3) Drain 4) Pb-free lead plating RoHS compliant 2 1 BODY DIODE 2 ESD PROTECTION DIODE (1) (2) Packaging specifications Packaging Taping Reel size (mm) 180 Application Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TL Marking FB Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V V 45 DSS *1 Continuous drain current I 2.0 A D *2 Pulsed drain current I 8.0 A D,pulse V Gate - Source voltage V 20 GSS *3 P 1.0 W D Power dissipation *4 0.54 W P D T Junction temperature 150 C j T Range of storage temperature 55 to 150 C stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.03 - Rev.B 1/11Data Sheet RQ5H020SP Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 - - 125 C/W R thJA Thermal resistance, junction - ambient *4 R - - 232 C/W thJA Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 -- V (BR)DSS GS D voltage V Breakdown voltage I = 1mA (BR)DSS D - 43 -mV/C temperature coefficient T referenced to 25C j I V = 45V, V = 0V Zero gate voltage drain current -- 1 A DSS DS GS Gate - Source leakage current I V = 20V, V = 0V -- 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 3.0 V GS (th) DS D V Gate threshold voltage I = 1mA (GS)th D -3.2 - mV/C temperature coefficient T referenced to 25C j V = 10V, I = 2.0A - 130 190 GS D V = 4.5V, I = 2.0A - 180 260 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.0V, I = 2.0A - 200 280 GS D V = 10V, I = 2.0A, T =125C - 200 - GS D j R Gate input resistannce f = 1MHz, open drain - 21 - G *5 Transconductance V = 10V, I = 2.0A 1.2 4.0 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 Mounted on a seramic board (30300.8mm) *4 Mounted on a FR4 (12200.8mm) *5 Pulsed www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.03 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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ROHM Semiconductor

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