RQ3E100BNTB

RQ3E100BN Datasheet Nch 30V 21A Power MOSFET llOutline V 30V DSS R (Max.) 10.4m DS(on) HSMT8 I 21A D P 15W D llInner circuit llFeatures 1) Low on - resistance 2) High Power Package (HSMT8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 3000 Taping code TB Marking E100BN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 21 A c D Continuous drain current T = 25C I 10 A a D *2 I Pulsed drain current 40 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 12 A AS *3 E Avalanche energy, single pulse 14 mJ AS *1 P 15 W D Power dissipation *4 P 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/10 20170126 - Rev.003 RQ3E100BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 8.3 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 10A - 7.7 10.4 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 10A - 11.0 15.3 GS D R Gate resistance f=1MHz, open drain - 2.5 - G Forward Transfer *5 Y V = 5V, I = 10A 12 - - S fs DS D Admittance *1Tc=25 , Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = 24V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20170126 - Rev.003 2017 ROHM Co., Ltd. All rights reserved.