X-On Electronics has gained recognition as a prominent supplier of RQ3E120GNTB mosfet across the USA, India, Europe, Australia, and various other global locations. RQ3E120GNTB mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RQ3E120GNTB

RQ3E120GNTB electronic component of ROHM
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See Product Specifications
Part No.RQ3E120GNTB
Manufacturer: ROHM
Category:MOSFET
Description: ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
Datasheet: RQ3E120GNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1756 ea
Line Total: USD 526.8

Availability - 5820
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1756
6000 : USD 0.1726
12000 : USD 0.1697
18000 : USD 0.1667
24000 : USD 0.1637

19 - WHS 2


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4499
10 : USD 0.3836
30 : USD 0.3472
100 : USD 0.3061
500 : USD 0.2877
1000 : USD 0.2794

55090 - WHS 3


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4865
10 : USD 0.4186
100 : USD 0.2944
500 : USD 0.2369
1000 : USD 0.1978
3000 : USD 0.1725
9000 : USD 0.1713
24000 : USD 0.1679
45000 : USD 0.1644

2880 - WHS 4


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 172
Multiples : 1
172 : USD 0.6198
250 : USD 0.595
500 : USD 0.5736
1000 : USD 0.5548
2500 : USD 0.5385

2882 - WHS 5


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 114
Multiples : 1
114 : USD 0.3575
200 : USD 0.3559
500 : USD 0.2909
1000 : USD 0.2714
2000 : USD 0.2697

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We proudly offer the RQ3E120GNTB MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RQ3E120GNTB MOSFET.

RQ3E120GN Datasheet Nch 30V 27A Power MOSFET llOutline V 30V DSS R (Max.) 8.8m DS(on) HSMT8 I 27A D P 15W D llInner circuit llFeatures 1) Low on - resistance 2) High power package (HSMT8) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 3000 Taping code TB Marking E120GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 27 A c D Continuous drain current T = 25C I 12 A a D *2 I Pulsed drain current 48 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 12 A AS *3 E Avalanche energy, single pulse 10 mJ AS *1 P 15 W D Power dissipation *4 P 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/10 20170406 - Rev.004 RQ3E120GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 8.3 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 28 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 24V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = V , I = 1mA 1.2 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3.87 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 12A - 6.7 8.8 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 12A - 9.1 13.8 GS D R Gate resistance f=1MHz, open drain - 2.3 - G Forward Transfer *5 Y V = 5V, I = 12A 10.0 - - S fs DS D Admittance *1 Tc = 25 , Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20170406 - Rev.004 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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