X-On Electronics has gained recognition as a prominent supplier of RQ1E070RPTR mosfet across the USA, India, Europe, Australia, and various other global locations. RQ1E070RPTR mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RQ1E070RPTR

Hot RQ1E070RPTR electronic component of ROHM
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See Product Specifications
Part No.RQ1E070RPTR
Manufacturer: ROHM
Category:MOSFET
Description: ROHM Semiconductor MOSFET MID PWR MOSFET SER
Datasheet: RQ1E070RPTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

65: USD 0.6322 ea
Line Total: USD 41.09

Availability - 11390
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 65  Multiples: 1
Pack Size: 1
Availability Price Quantity
5941 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 1.173
10 : USD 0.9039
100 : USD 0.7624
500 : USD 0.6762
1000 : USD 0.5669
3000 : USD 0.5416
6000 : USD 0.5416
9000 : USD 0.521
24000 : USD 0.5198

11390 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 65
Multiples : 1
65 : USD 0.6322
100 : USD 0.5557
200 : USD 0.5314
500 : USD 0.5022
1000 : USD 0.4761
3000 : USD 0.4404
6000 : USD 0.4257

5820 - WHS 3


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 138
Multiples : 1
138 : USD 0.7727
250 : USD 0.7418
500 : USD 0.715
1000 : USD 0.6916
2500 : USD 0.6712
5000 : USD 0.6531

1253 - WHS 4


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 138
Multiples : 1
138 : USD 0.7727
250 : USD 0.7418
500 : USD 0.715
1000 : USD 0.6916

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We proudly offer the RQ1E070RPTR MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RQ1E070RPTR MOSFET.

RQ1E070RP Datasheet Pch -30V -7A Small Signal MOSFET llOutline V -30V DSS R (Max.) 17m DS(on) TSMT8 I 7A D P 1.5W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT8) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type DC/DC converters Basic ordering unit (pcs) 3000 Taping code TR Marking UE llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 7 A D *1 I Pulsed drain current 28 A DP V Gate - Source voltage 20 V GSS *2 P 1.5 W D Power dissipation *3 P 1.1 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180910 - Rev.002 RQ1E070RP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 83.3 /W thJA Thermal resistance, junction - ambient *3 R - - 113 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -7.0A - 12 17 GS D Static drain - source *4 R V = -4.5V, I = -3.5A - 17 24 m DS(on) GS D on - state resistance V = -4.0V, I = -3.5A - 19 27 GS D R Gate resistance f = 1MHz, open drain - 5.2 - G Forward Transfer *4 Y V = -10V, I = -7A 6 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180910 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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RHE
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ROHM Semiconductor

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