Product Information

RQ1A060ZPTR

RQ1A060ZPTR electronic component of ROHM

Datasheet
MOSFET SW MOSFET MID PWR P-CH 12V -6A

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8935 ea
Line Total: USD 0.89

3343 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3343 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.8935
10 : USD 0.7786
100 : USD 0.5509
500 : USD 0.4738
1000 : USD 0.4152
3000 : USD 0.3657
6000 : USD 0.3657
9000 : USD 0.3507
24000 : USD 0.3461

264 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 145
Multiples : 1
145 : USD 0.6909

2516 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 145
Multiples : 1
145 : USD 0.6574
250 : USD 0.6381
500 : USD 0.6253

2910 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 145
Multiples : 1
145 : USD 0.6574
250 : USD 0.6381
500 : USD 0.6253

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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RQ1A060ZP Datasheet Pch -12V -6A Middle Power MOSFET llOutline TSMT8 V -12V DSS R (Max.) 23m DS(on) I 6A D P 1.5W D llInner circuit llFeatures 1) Low on - resistance. 2) -1.5V Drive 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking YH llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -12 V DSS I Continuous drain current 6 A D *1 I Pulsed drain current 24 A D,pulse V Gate - Source voltage 10 V GSS *2 P 1.5 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 RQ1A060ZP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 83.3 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -6A - 16 23 GS D V = -2.5V, I = -3A - 22 31 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -3A - 28 42 GS D V = -1.5V, I = -1.2A - 39 78 GS D R Gate input resistance f = 1MHz, open drain - 20 - G Forward Transfer *4 Y V = -6V, I = -6A 7.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (20200.8mm) *4 Pulsed www.rohm.com 2/11 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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