Product Information

RFV8BM6SFHTL

RFV8BM6SFHTL electronic component of ROHM

Datasheet
Diodes - General Purpose Power Switching 600V VR 8A IO TO-252DPAK; TO-252
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4001 ea
Line Total: USD 1.4

3557 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3558 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.4001
10 : USD 1.0856
100 : USD 0.9112
500 : USD 0.8092
1000 : USD 0.6775
2500 : USD 0.6479
5000 : USD 0.6479
10000 : USD 0.6229
25000 : USD 0.6075

Read More Specifications

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Hts Code
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RFV8BM6SFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) Standard Fast Recovery Applications 1 General rectification For PFC TO-252 (CCM : Continuous Current Mode) Cathode Structure ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Features Open Anode 1) Hyper fast recovery Taping Dimensions (Unit : mm) / Hard recovery type 2) Ultra low switching loss High current overload capacity 3) Construction Silicon epitaxial planar type Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM V Reverse voltage Direct voltage 600 V R Average rectified foward current I 60Hz half sin wave , Resistive load T =50C 8 A c o I 60Hz half sin wave, Non-repetitive at T=25C 100 Forward current surge peak j A FSM Operating junction temperature T - 150 C j T - Storage temperature 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit T=25C 1.6 2.3 2.8 V j V I =8A Forward voltage F F T=125C j -1.55- V T=25C -0.03 10 j A I V =600V Reverse current R R T=125C j - 5 200 A I =0.5A, I =1A, Irr=0.25I -15 25 ns F R R Reverse recovery time trr I =8A, V =400V, dI /dt=-200A/ s -25 45 ns F R F I I =8A,V =400V Reverse recovery current F R -5.5 - A Rp T=125C j dI /dt= 200A/ s Reverse recovery charges Qrr - 150 - nC F I =8A, dI /dt= 100A/ s, Forward recovery time tfr - 125 - ns F F V V =1.1V Forward recovery voltage -4.5 - V Fp FR Fmax R Junction to ambient - - 12 C / W th(j-a) Thermal resistance R Junction to case -- 4.5 C / W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.B 1/5Datasheet RFV8BM6SFH Electrical Characteristic Curves 100 100000 T = 150 C j T = 125 C j 10000 10 1000 T = 75 C j T = 150 C j 1 T = 125 C j 100 T = 25 C T = 75 C j j 0.1 10 T = 25 C j 1 0.01 0 1000 2000 3000 4000 5000 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C j f = 1MHz T = 25 C a 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 1 10 110 100 0 5 10 15 20 25 30 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.B 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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