We are the renowned RFVS8TJ6SGC9 Diodes - General Purpose, Power, Switching seller and distributer in the USA, India, Europe, Australia, and beyond. RFVS8TJ6SGC9 Diodes - General Purpose, Power, Switching is a manufacturer from ROHM. X-ON Electronics Components provides affordable electronic Diodes - General Purpose, Power, Switching in the USA.

RFVS8TJ6SGC9

RFVS8TJ6SGC9 electronic component of ROHM
Part No.RFVS8TJ6SGC9
Manufacturer: ROHM
Category:Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 600V Vrm 8A Io Recovery Diode
Datasheet: RFVS8TJ6SGC9 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7964 ea
Line Total: USD 0.8

186 - Global Stock
Ships to you between
Thu. 06 Jun to Tue. 11 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
186 - WHS 1


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7964
10 : USD 0.558
30 : USD 0.3946
100 : USD 0.3481
500 : USD 0.2749
1000 : USD 0.2654

905 - WHS 2


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 1.265
10 : USD 1.0522
100 : USD 0.8349
500 : USD 0.7291
1000 : USD 0.6083
2000 : USD 0.5819
5000 : USD 0.5819
10000 : USD 0.56

We proudly offer the RFVS8TJ6SGC9 Diodes - General Purpose, Power, Switching at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RFVS8TJ6SGC9 Diodes - General Purpose, Power, Switching.
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Brand
Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
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Super Fast Recovery Diode RFVS8TJ6S Data Sheet lSerise lDimensions (Unit : mm) lStructure f3.10.1 4.50.1 Standard Fast Recovery 10.20.2 2.60.1 lApplication General rectification For PFC Cathode Anode RFVS8 (CCM : Continuous Current Mode) TJ6S 1 2 lFeatures 2.60.1 Hyper fast recovery / Hard recovery type 1) 1.40.2 2) Ultra low switching loss 3) High current overload capacity 0.60.1 2.540.1 0.830.1 lConstruction 5.080.1 Silicon epitaxial planar type ROHM : TO-220ACFP 1 : Manufacture year, week,day, package code 2 : Serial number lAbsolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 600 V RM V Direct reverse voltage 600 Reverse voltage V R T =60C I 60Hz half sin wave , resistive load Average current c 8 A o 60Hz half sin wave, one cycle, non-repetitive at T =25C Non-repetitive forward surge current I j 60 A FSM Operating junction temperature T - 150 C j Storage temperature T - -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit T =25C j 1.6 2.5 3.0 V Forward voltage V I =8A F F T =125C j - 1.8 - V T =25C j - 0.03 10 mA I V =600V Reverse current R R T =125C j - 5 200 mA I =0.5A, I =1A, Irr=0.25I - 12 20 ns F R R Reverse recovery time trr I =8A, V =400V, dI /dt=-200A/ ms - 20 40 ns F R F I =8A, V =400V Reverse recovery current I - 5.0 - A F R Rp T =125C j Reverse recovery charges Qrr dI /dt= -200A/ ms - 145 - nC F I =8A, dI /dt=100A/ ms, Forward recovery time tfr - 110 - ns F F V V =1.1xV Forward recovery voltage - 4.5 - V Fp FR Fmax R (j-a) Junction to ambient - - 10 C/W th Thermal resistance R (j-c) Junction to case - - 3.5 C/W th www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 1/5 3 16.00.1 9.560.2 3.950.1 13.51 28.560.2 9.050.1 6 15.050.1 Data Sheet RFVS8TJ6S lElectrical Characteristic Curves 100000 100 T = 125 C T = 150 C j j 10000 10 T = 150 C j 1000 T = 75 C j 1 T = 125 C j 100 T = 25 C j T = 75 C j 0.1 10 T = 25 C j 1 0.01 0 100 200 300 400 500 600 0 1000 2000 3000 4000 5000 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 1000 T = 25 C f = 1MHz j T = 25 C a 100 10 10 I FSM 8.3ms 8.3ms 1cyc. 1 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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