Product Information

RFNL5BM6SFHTL

RFNL5BM6SFHTL electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching Fast Recvry 600V Vr TO-252(DPAK) 5A Io

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9863 ea
Line Total: USD 0.99

2425 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
318 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.8257
10 : USD 0.698
100 : USD 0.5623
500 : USD 0.4945
1000 : USD 0.414
2500 : USD 0.4036
5000 : USD 0.4036
10000 : USD 0.3876

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Series
Qualification
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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Super Fast Recovery Diode RFNL5BM6SFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 1 General rectification for PFC (Discontinuous Current Mode) TO-252 2.3 2.3 Features Structure Cathode ROHM : TO-252 1) Ultra low forward voltage JEITA : SC-63 1 2) High current overload capacity : Manufacture Date Open Anode Taping specifications (Unit : mm) Construction Silicon epitaxial planar type Absolute maximum ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 600 V R I 60Hz half sin wave , Resistive load T = 97C 5 Average current c A o 60Hz half sin wave ,Non-repetitive at T=25C Non-repetitive forward surge current I 50 j A FSM Operating junction temperature T - 150 C j Storage temperature T - 55 to 150 C stg Electrical characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit I =5A Forward voltage V 0.9 1.1 1.3 V F F I V =600V Reverse current -0.02 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr - 38 60 ns F R R R Thermal resistance Junction to case -- 6.0 C / W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.D 1/4 3.0 2.0 6.0Datasheet RFNL5BM6SFH Electrical characteristic curves 100 100000 T = 150 C j T = 125 C j 10000 T = 125 C j 1000 10 T = 75 C j T = 150 C j 100 T = 25 C j T = 75 C j 1 10 1 T = 25 C j 0.1 0.1 0 100 200 300 400 500 600 0 500 1000 1500 2000 2500 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C j f = 1MHz T = 25 C a 100 100 10 10 I FSM 8.3ms 8.3ms 1cyc. 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.D 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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