Product Information

RFUH10NS6SFHTL

RFUH10NS6SFHTL electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching Fast Recvry 600V Vr TO-263S 10A Io
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8471 ea
Line Total: USD 1.85

1278 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1263 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 1.2921
10 : USD 1.0083
100 : USD 0.8441
500 : USD 0.7499
1000 : USD 0.6279
2000 : USD 0.6001
5000 : USD 0.6001
10000 : USD 0.5771

Read More Specifications

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Series
Qualification
Packaging
Repetitive Reverse Voltage Vrrm Max
Forward Current If Av
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
No Of Pins
Svhc
Msl
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
LoadingGif

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFUH10NS6S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Super Fast Recovery Applications RFUH10 General rectification NS6S Features LPDS 1)Ultra low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Date Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=64C 10 Io A (*1) Forward current surge peak I 60 60Hz half sin wave , Non-repetitive at Tj=25C A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =10A 1.8 2.8 Forward voltage F F V V =600V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 15 25 ns F R R Thermal resistance Rth(j-c) Junction to case 3.0 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFUH10NS6S 100 100000 Tj=150 C 10000 Tj=125 C 10 Tj=75 C 1000 Tj=150 C Tj=125 C 100 Tj=25 C 1 Tj=75 C Tj=25 C 10 0.1 1 0 500 1000 1500 2000 2500 3000 0 100 200 300 400 500 600 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 2000 1000 I =10A F V =600V R 1950 Tj=25 C Tj=25 C 1900 100 1850 1800 1750 10 AVE:1806mV AVE:32.3nA 1700 1650 1600 1 I DISPERSION MAP R V DISPERSION MAP F 180 1000 f=1MHz f=1MHz 175 V =0V R 170 Tj=25 C 165 100 160 155 150 AVE:157pF 10 145 140 135 130 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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