Product Information

RFUH10TB4S

RFUH10TB4S electronic component of ROHM

Datasheet
Diode Switching 430V 10A 2-Pin(2+Tab) TO-220FN Bulk
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

29: USD 1.1772 ea
Line Total: USD 34.14

0 - Global Stock
MOQ: 29  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 29
Multiples : 1
29 : USD 1.1772
50 : USD 0.8543
100 : USD 0.7563

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Packaging
Brand
Operating Temperature Classification
Operating Temp Range
Rev Recov Time
Rev Curr
Package Type
Pin Count
Peak Non-Repetitive Surge Current
Rad Hardened
Rectifier Type
LoadingGif

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFUH10TB4S Serise Dimensions(Unit : mm) Structure Super Fast Recovery Applications General rectification Features 1)Ultra low switching loss FUH10T 2)High current overload capacity B4S Construction Silicon epitaxial planer type 2.54d 0.5 2.54d 0.5 ROHM : TO220FN Manufacture Year Week Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 430 V RM Reverse voltage V Direct voltage 430 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=90C 10 Io A Forward current surge peak I 60Hz half sin wave , Non-repetitive at Tj=25C 80 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =10A 1.4 1.7 Forward voltage F V F V =430V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 15 25 ns F R R Thermal resistance Rth(j-c) Junction to case 3.0 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Not Recommended for New Designs Data Sheet RFUH10TB4S 100000 100 Tj=150 C 10000 Tj=125 C 10 1000 Tj=150 C Tj=75 C Tj=125 C 100 1 Tj=75 C Tj=25 C 10 Tj=25 C 0.1 1 0 50 100 150 200 250 300 350 400 450 0 500 1000 1500 2000 2500 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 1000 1450 1440 V =430V I =10A R F 1430 Tj=25 C Tj=25 C 1420 1410 100 1400 AVE:17.6nA 1390 1380 1370 1360 10 1350 1340 AVE:1371mV 1330 1320 1310 1300 1 V DISPERSION MAP F I DISPERSION MAP R 200 1000 f=1MHz f=1MHz 190 V =0V R 180 Tj=25 C 170 100 160 150 140 AVE:150pF 10 130 120 110 100 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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