X-On Electronics has gained recognition as a prominent supplier of RFUH10NS4STL diodes - general purpose, power, switching across the USA, India, Europe, Australia, and various other global locations. RFUH10NS4STL diodes - general purpose, power, switching are a product manufactured by ROHM. We provide cost-effective solutions for diodes - general purpose, power, switching, ensuring timely deliveries around the world.

RFUH10NS4STL ROHM

RFUH10NS4STL electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RFUH10NS4STL
Manufacturer: ROHM
Category:Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 430V Vrm 10A Io Recovery Diode
Datasheet: RFUH10NS4STL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

119: USD 0.771 ea
Line Total: USD 91.75

Availability - 970
Ships to you between
Fri. 07 Jun to Thu. 13 Jun
MOQ: 119  Multiples: 1
Pack Size: 1

RFUH10NS4STL More Buying Options & Price Grid(s)

Availability Price Quantity
970 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 106
Multiples : 1
106 : USD 1.0062
250 : USD 0.9659
500 : USD 0.9311
1000 : USD 0.9006

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Brand
Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
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We are delighted to provide the RFUH10NS4STL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFUH10NS4STL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFUH10NS4S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Super Fast Recovery Applications RFUH10 NS4S General rectification Features LPDS 1)Ultra low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Date Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 430 V RM Reverse voltage V Direct voltage 430 V R YDJH UHU H HG IRZIWFLL DG UHQW FUXU 60Hz half sin wave , Resistive load Tc=70C 10 Io A Forward current surge peak I 60Hz half sin wave , Non-repetitive at Tj=25C 80 A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =10A 1.4 1.7 Forward voltage F F V V =430V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery Time trr 15 25 ns F R R Thermal resistance Rth(j-c) Junction to case 4.0 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFUH10NS4S 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=75 C Tj=150 C 100 Tj=125 C 1 Tj=25 C Tj=75 C 10 Tj=25 C 0.1 1 0 500 1000 1500 2000 2500 0 50 100 150 200 250 300 350 400 450 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1450 100 1440 I =10A V =430V F R 1430 Tj=25 C Tj=25 C 1420 1410 1400 AVE:1371mV 1390 1380 10 1370 1360 AVE:17.6nA 1350 1340 1330 1320 1310 1300 1 V DISPERSION MAP I DISPERSION MAP F R 1000 200 f=1MHz f=1MHz 190 V =0V R Tj=25 C 180 170 100 160 150 140 10 AVE:150pF 130 120 110 100 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT:I (A) FORWARD VOLTAGE:V (mV) F F TERMINALS:Ct(pF) CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) REVERSE CURRENT:I (nA) R R TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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