Product Information

RFNL10TJ6SGC9

RFNL10TJ6SGC9 electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching 600V Vrm 10A Io Recovery Diode
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.701 ea
Line Total: USD 1.7

893 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1476 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 1.449
10 : USD 1.1845
100 : USD 0.958
500 : USD 0.8361
1000 : USD 0.6992
2000 : USD 0.6693
5000 : USD 0.6693
10000 : USD 0.6429
25000 : USD 0.6371

Read More Specifications

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RFNL10TJ6S Data Sheet lSerise lDimensions (Unit : mm) lStructure 4.50.1 f3.10.1 Standard Fast Recovery 10.20.2 2.60.1 lApplication General rectification For PFC Anode Cathode RFNL10 (DCM : Discontinuous Current Mode) TJ6S 1 2 lFeatures 2.60.1 1) Ultra low forward voltage 1.40.2 2) Low switching loss 3) High current overload capacity 0.60.1 2.540.1 0.830.1 lConstruction 5.080.1 Silicon epitaxial planar type ROHM : TO-220ACFP 1 : Manufacture year, week,day, package code 2 : Serial number lAbsolute Maximum Ratings (T = 25C) a Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 600 V RM V Direct reverse voltage 600 Reverse voltage V R I 60Hz half sin wave , resistive load Average current 10 A o 60Hz half sin wave, one cycle, non-repetitive at T =25C Non-repetitive forward surge current I j 120 A FSM Operating junction temperature T - 150 C j Storage temperature T - -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit T =25C j 0.85 1.05 1.25 V I =8A F T =125C j - 0.9 - V Forward voltage V F T =25C j 0.9 1.1 1.3 V I =10A F T =125C j - 0.95 - V T =25C - 0.03 10 mA j I V =600V Reverse current R R T =125C - 3 200 j mA I =0.5A, I =1A, Irr=0.25I - 45 65 ns F R R Reverse recovery time trr I =10A, V =400V, dI /dt=-100A/ ms - 100 150 ns F R F I =10A, dI /dt=100A/ ms, Forward recovery time tfr - 180 - ns F F V V =1.1xV Forward recovery voltage - 3.3 - V Fp FR Fmax R (j-a) Junction to ambient - - 8.0 C/W th Thermal resistance R (j-c) Junction to case - - 3.2 C/W th www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 1/5 3 16.00.1 9.560.2 3.950.1 13.51 28.560.2 9.050.1 6 15.050.1 Data Sheet RFNL10TJ6S lElectrical Characteristic Curves 100 100000 T = 150 C j T = 125 C j 10000 10 1000 T = 75 C j T = 150 C j 1 100 T = 25 C j T = 125 C j 10 T = 75 C j 0.1 1 T = 25 C j 0.01 0.1 0 500 1000 1500 2000 2500 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C j f = 1MHz T = 25 C a 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 10 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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