Product Information

RBQ20NS65AFHTL

RBQ20NS65AFHTL electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers 65V Vr 20A Io SBD TO-263S(D2PAK) 10A
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.499 ea
Line Total: USD 1.5

4489 - Global Stock
Ships to you between
Mon. 03 Jun to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2450 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 1.5697
10 : USD 1.2832
100 : USD 1.0004
500 : USD 0.8484
1000 : USD 0.6291
2000 : USD 0.6204
5000 : USD 0.6129
10000 : USD 0.5905
25000 : USD 0.5756

Read More Specifications

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Qualification
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
LoadingGif

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Additional Infomation About Product

RBQ20NS65AFH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 65 V R I 20 A o I 100 A FSM Features Inner Circuit High reliability Power mold type Cathode common dual type Low I R Application Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking BQ20NS65A Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 65 V RM Reverse voltage V Reverse direct voltage 65 V R 60Hz half sin waveformresistive load Average rectified forward current I 20 A o I /2 per diodeT =115Max. o c 60Hz half sin waveform Peak forward surge current I 100 A FSM non-repetitiveper diodeT =25 a (1) Junction temperature T - 150 j Storage temperature T - -55 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j JA Attention www.rohm.com 1/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003RBQ20NS65AFH Data sheet Electrical Characteristics (T =25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit (1) V Forward voltage I =10A - 0.61 0.69 V F F I V =60V - 20 80 A R1 R (1) Reverse current I V =65V - 30 140 A R2 R Note (1) Value per diode Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Per diode - - 1.6 /W (1) (2) R Thermal Resistance (Junction to case) JC Per device - - 1.0 /W (1) (3) R Thermal Resistance (Junction to ambient) JA - - 55 /W Notes (1) Value is guaranteed by design. (2) Transient dual interface measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 boardsingle-sided copper35m thicknessreference footprint. Characteristic Curves www.rohm.com 2/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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