Product Information

RBR2MM60BTFTR

RBR2MM60BTFTR electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers 60V VR 2A 0.58V VF PMDU; SOD-123FL
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2042 ea
Line Total: USD 1.02

1673 - Global Stock
Ships to you between
Tue. 04 Jun to Fri. 07 Jun
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
1673 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 5
Multiples : 5
5 : USD 0.2042
50 : USD 0.1635
150 : USD 0.1461
500 : USD 0.1242
3000 : USD 0.1145
6000 : USD 0.1087

8773 - WHS 2


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 250
Multiples : 1
250 : USD 0.1607
500 : USD 0.1383
1000 : USD 0.1312
2000 : USD 0.1227
3000 : USD 0.1201

Read More Specifications

     
Manufacturer
Product Category
Brand
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Configuration
Diode Case Style
No. Of Pins
Forward Voltage Vf Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Automotive Qualification Standard
Svhc
Semiconductor Technology
LoadingGif

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Additional Infomation About Product

RBR2MM60BTF Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 60 V R I 2 A o I 30 A FSM Features Inner Circuit High reliability Small power mold type Low V F Application Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Structure Quantity(pcs) 3000 Silicon epitaxial planar Taping Code TR Marking E7 Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage Duty0.5 60 V RM V Reverse voltage Reverse direct voltage 60 V R Glass epoxy mounted I 60Hz half sin waveformresistive load Average rectified forward current 2 A o T =85 Max. c 60Hz half sin waveformNon-repetitive I Peak forward surge current 30 A FSM one cycleT =25 a (1) T Junction temperature - 150 j T Storage temperature - -55 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j th(j-a) (T =25C unless otherwise specified) Characteristics j Parameter Symbol Conditions Min. Typ. Max. Unit V Forward voltage I =2A - - 0.58 V F F Reverse current I V =60V - - 100 A R R Attention www.rohm.com 1/5 2016- ROHM Co., Ltd. All rights reserved. 2019/05/28 Rev.002RBR2MM60BTF Data sheet Characteristic Curves www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 2019/05/28 Rev.002

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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