Product Information

RBR10BM60AFHTL

RBR10BM60AFHTL electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers 60V Vr 10A Io SBD TO-252(DPAK) 5A IF
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0841 ea
Line Total: USD 1.08

1379 - Global Stock
Ships to you between
Mon. 03 Jun to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2021 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6016
10 : USD 0.5921
100 : USD 0.5778
500 : USD 0.5529
1000 : USD 0.4639
2500 : USD 0.4438
5000 : USD 0.4438
10000 : USD 0.4259
25000 : USD 0.4153

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
LoadingGif

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Additional Infomation About Product

RBR10BM60AFH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 60 V R I 10 A o I 50 A FSM Features Inner Circuit High reliability Power mold type Cathode common dual type Low V F Application Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 16 Structure Quantity(pcs) 2500 Silicon epitaxial planar Taping Code TL Marking BR10BM60A Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 60 V RM Reverse voltage V Reverse direct voltage 60 V R 60Hz half sin waveformresistive load Average rectified forward current I 10 A o I /2 per diodeT =95Max. o c 60Hz half sin waveform Peak forward surge current I 50 A FSM non-repetitiveper diodeT =25 a (1) Junction temperature T - 150 j Storage temperature T - -55 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j JA Attention www.rohm.com 1/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003RBR10BM60AFH Data sheet Electrical Characteristics (T =25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit (1) V Forward voltage I =5A - - 0.65 V F F (1) I V =60V Reverse current - - 200 A R R Note (1) Value per diode Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Per diode - - 3.5 /W (1) (2) R Thermal Resistance (Junction to case) JC Per device - - 2.2 /W (1) (3) R Thermal Resistance (Junction to ambient) - - 75 /W JA Notes (1) Value is guaranteed by design. (2) Transient dual interface measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 boardsingle-sided copper35m thicknessreference footprint. Characteristic Curves www.rohm.com 2/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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