Product Information

F0480NBGI

F0480NBGI electronic component of Renesas

Datasheet
IDT RF Amplifier Digital Var Gain Amp 13dB 400 TO 2700 MHz

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 14.681 ea
Line Total: USD 14.68

35 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
35 - WHS 1


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1

Stock Image

F0480NBGI
Renesas

1 : USD 11.3735
10 : USD 10.419
25 : USD 9.016
100 : USD 8.5905
250 : USD 8.418
490 : USD 7.9235
980 : USD 7.9235
2940 : USD 7.9235
5390 : USD 7.9235

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Amplifier Type
Brand
Number Of Channels
Input Return Loss
Isolation Db
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

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IDTF0480NBGI Datasheet Matched Broadband RF VGA 400MHz to 2700MHz GENERAL DESCRIPTION FEATURES This document describes the specifications for the 400 MHz 2700 MHz IDTF0480 400 MHz to 2700 MHz RF Digital Variable Gain < 1 dB overshoot between gain transitions Amplifier used in receiver, transmitter and other 13 dB typical max gain applications. 23 dB gain range, 1 dB gain step resolution Excellent linearity +41 dBm OIP3 IDTF0480 RF DVGA provides 13 dB typical maximum Noise Figure 4 dB gain (no attenuation) with 4 dB noise figure and 23 dB I = 100 mA CC gain adjustment in 1 dB steps designed to operate 1.3 mA standby current with a single 5 V supply. Nominally, the device offers SPI interface +41 dBm output IP3 using 100 mA of I . CC 50 input and output impedance This device is packaged in a 5x5 32-pin thin QFN with Broadband, Internally Matched 50 ohm single-ended RF input and RF output Gain increases vs. frequency to counteract impedances for ease of integration into the signal-path system board losses lineup. 5x5 32-pin TQFN package DEVICE BLOCK DIAGRAM COMPETITIVE ADVANTAGE In many applications, digital step attenuators followed by RF amplifiers are used in the Receive path. The IDTF0480 RF DVGA provides very high reliability by TM combining a silicon Glitch-Free DSA & a Zero- TM Distortion RF amplifier in a single, compact QFN package. Utilizing IDTs technology, the resultant RF VGA provides +41 dBm OIP3 performance across a very wide bandwidth of 400 MHz to 2700 MHz at approximately 100 mA of current. Furthermore the device is internally matched so there is no need to optimize external matching elements. TM TM ZZeerroo--DDiissttoorrttiioonn TTMM GGlliittcchh--FFrreeee APPLICATIONS Multi-mode, Multi-carrier Receivers PCS1900 Base Stations DCS1800 Base Stations ORDERING INFORMATION WiMAX and LTE Base Stations Omit IDT Tape & 0.75 mm height UMTS/WCDMA 3G Base Stations prefix Reel package PHS/PAS Base Stations Point to Point Infrastructure Public Safety Infrastructure IDTF0480NBGI8 Broadband Repeaters GPS Receivers Green RF product Line Distributed Antenna Systems Cable Infrastructure Digital Radio TM TM Glitch-Free , Zero-Distortion , RF VGA 1 Rev 3, April 2015 IDTF0480NBGI Datasheet Matched Broadband RF VGA 400MHz to 2700MHz ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Units VCC to GND V -0.3 +5.5 V CC SPI DATA, SPI CSb, SPI CLK, LogicCTL V -0.3 +3.6 V diD STBY, Band Select V -0.3 V + 0.25 V Cntl cc R Bias1 I +1.5 mA R1 R Bias2 I +0.8 mA R1 RFIN externally applied DC voltage V +1.4 +3.6 V RFin RFOUT externally applied DC voltage V V - 0.15 V + 0.15 V RFout cc cc RF Input Power (RFIN) applied for 24 P +22 dBm in hours maximum Continuous Power Dissipation P 1.5 W diss Junction Temperature T 150 C j Storage Temperature Range T -65 150 C st Lead Temperature (soldering, 10s) 260 C ElectroStatic Discharge HBM Class 2 (JEDEC/ESDA JS-001-2012) (2000 V) ElectroStatic Discharge CDM Class C2 (JEDEC 22-C101F) (500 V) Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS (Junction Ambient) 40 C/W JA (Junction Case) The Case is defined as the exposed paddle 4 C/W JC Moisture Sensitivity Rating (Per J-STD-020) MSL1 TM TM Glitch-Free , Zero-Distortion , RF VGA 2 Rev 3, April 2015

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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