Product Information

RFPA1802TR7

RFPA1802TR7 electronic component of Qorvo

Datasheet
RF Amplifier 1.6-2GHz NF 3.3dB -30C +85C

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 2.7649 ea
Line Total: USD 6912.25

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 2.85

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Series
Test Frequency
Brand
Number Of Channels
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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RFPA1802 RFPA1802 RFPA1802 Integrated Power Amplifier 1600MHz to 2000MHz Package: MCM, 10-pin, 2.0mm x 2.5mm x 0.9mm The RFPA1802 has over 28dB of small signal gain over 1600MHz to 2000MHz. When used with DPD at 3.3V, the RFPA1802 can Features deliver 24dBm LTE Downlink (CFR 7.5dB) with ACPR <-50dBc. P = 24dBm, 25% PAE, with OUT 3.3V, 20MHz LTE DL, CFR 7.5dB Two digital control pins select high, medium or low power modes if ACP <-50dBc with DPD desired to optimize performance and current drain at different 28dB Gain over 1600MHz to power levels. The RFPA1802 has an integrated directional 2000MHz coupler, integrated biasing circuitry, and integrated matching to Instantaneous P3dB = 32dBm at 50. No external DC blocking is required as the RF pins are at 3.3V DC ground. Designed to Support Flexible V CC 0.5V to 4.5V for PAE Optimization Envelope Tracking Compatible Integrated Power Coupler VBAT 1 10 VCC Integrated 50 Matching Integrated Biasing 2 9 RF IN RF OUT No External DC Block Needed 3 Power Mode Operation 3 8 VMODE1/GND CPL IN GPIO Interface Bias, Ultra Small and Low Profile mode & 4 7 VMODE0 GND enable controls Applications VEN 5 6 CPL OUT Power Amplifier, Power Amplifier Driver Functional Block Diagram Small Cell Base Stations Wideband Instrumentation Customer Premise Equipment Ordering Information Data Cards RFPA1802SQ Sample bag with 25 pieces RFPA1802SR 7 Reel with 100 pieces RFPA1802TR7 7 Reel with 2500 pieces RFPA1802PCK-410 1600MHz to 2000MHz PCBA with 5-piece sample bag RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS150602 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, 1 of 10 trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. RFPA1802 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Supply Voltage in Standby Mode 6.0 V Supply Voltage in Idle Mode 6.0 V RFMD Green: RoHS status based on EU Supply Voltage in Operating Mode 6.0 V Directive 2011/65/EU (at time of this document revision), halogen free per IEC 6.0 V Supply Voltage, V BATT 61249-2-21, < 1000ppm each of antimony 3.5 V trioxide in polymeric materials and red Control Voltage, V , V , V EN MODE0 MODE1 phosphorus as a flame retardant, and +10 dBm RF Input Power (CW, V = 3.3V, 50 Load) <2% antimony in solder. CC RF Output Power (CW, 50 Load) +30 dBm Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent 8:1 Output Load VSWR (LTE DL 7.5dB CFR, V = 4.5V, CC damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce P <24dBm) FORWARD device reliability. Specified typical performance or functional operation of the device under Absolute ESD Rating, All Pins, HBM, JESD22-A114 2000 V Maximum Rating conditions is not implied. ESD Rating, All Pins, CDM, JESD22-C101 1000 V Moisture Sensitivity Level MSL3 Recommended Operating Condition Parameter Specification Unit Min Typ Max Operating Temperature Range -30 +25 +85 C Operating Junction Temperature 125 C +3 +3.3 +4.5 V V BATT 1 +0.5 +3.3 +4.5 V V CC Note: V down to 0.5V may be used for backed-off power when using DC-DC converter to conserve battery current. CC Nominal Operating Parameters Parameter Specification Unit Condition Min Typ Max General Performance Operating Frequency 1600 2000 MHz 0 0.5 V PA Disabled V , Low Level EN 1.5 1.8 3 V PA Enabled V , High Level EN 0 0.5 V For logic low V , V , Low Level MODE0 MODE1 1.5 1.8 3 V For logic high V , V , High Level MODE0 MODE1 1, 2 24 dBm High power mode (HPM) V = 3.3V Maximum Linear Output P CC OUT Thermal Resistance 37 C/W To backside of evaluation board Notes: 1. For operation at V = 3.0V, de-rate P by 2.0dB BATT OUT 2. P is specified for 20MHz LTE downlink with CFR 7.5dB, -50dBc ACPR using digital or analog predistortion OUT RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS150602 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, 2 of 10 trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc.

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Qorvo
Qorvo, Inc.
RF9
RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
TriQuint Semiconductor
TriQuint Semiconductor, Inc

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