Product Information

RFPA2016TR13

RFPA2016TR13 electronic component of Qorvo

Datasheet
RF Amplifier 700-2700MHz 1W Gain 36dB @2140MHz

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 12.0714
25 : USD 8.9811
100 : USD 7.2317
250 : USD 6.162
500 : USD 5.5826
1000 : USD 5.0477
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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AMP3 RFPA2016 RFPA2016 3-Stage Power Amplifier, 1W 700MHz to 2700MHz Package: MCM, 28-pin, 6.0mm x 6.0mm The RFPA2016 is a 3-stage HBT power amplifier module with high gain and excellent efficiency. External matching and bias Features control allows the RFPA2016 to be optimized for various WCDMA Power at 2140MHz = 21dBm with -45dBc ACPR applications including small-cell power amplifiers and ultra-linear Flexible External Matching for driver amplifiers within 700MHz and 2700MHz. Users can also Band Selection bypass the first stage to reduce gain and power consumption. Gain = 36dB at 2140MHz P1dB = 31dBm at 2140MHz 28 27 26 25 24 23 22 5V Supply Independent Bias Control for Each DETECTOR VBIAS Stage RFIN3 1 21 DET OUT RFIN3 2 VBIAS 20 VBIAS VREG3 VBIAS Power-down Capability 3 19 RFOUT2/Vcc2 VREG3 Integrated Power Detector RFOUT2/Vcc2 4 18 VREG2 5 VREG2 17 VREG1 GND AMP2 GND 6 VBIAS 16 VPC OUT VBIAS BIAS SWITCH VREG1 Applications 7 15 VPC EN RFIN2 2G, 3G, and 4G Air Interfaces 8 9 10 11 12 13 14 Picocell, Femtocell Power Amplifier E-pad Module GND Driver Amplifier for Commercial Wireless Infrastructure Functional Block Diagram Ordering Information RFPA2016SQ Sample bag with 25 pieces RFPA2016SR 7 Reel with 100 pieces RFPA2016TR13 13 Reel with 2500 pieces RFPA2016PCK-410 728MHz to 768MHz PCBA with 5-piece sample bag RFPA2016PCK-411 2110MHz to 2170MHz PCBA with 5-piece sample bag RFPA2016PCK-412 2620MHz to 2690MHz PCBA with 5-piece sample bag RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140317 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, 1 of 25 trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. RFOUT1/Vcc1 GND GND GND GND RFOUT3/Vcc3 AMP1 GND RFOUT3/Vcc3 GND GND GND RFIN1 GND DET IN 1 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit 6.0 V Supply Voltage (V , V , V ) CC BIAS EN Amp1 DC Current (I ) 100 mA CC1 RFMD Green: RoHS status based on EU Amp2 DC Current (I ) 250 mA CC2 Directive 2011/65/EU (at time of this document revision), halogen free per IEC 800 mA Amp3 DC Current (I ) CC3 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red CW Input Power, 50 , 2-Stage Operation 1 dBm phosphorus as a flame retardant, and <2% antimony in solder. CW Input Power, 50 , 3-Stage Operation 18 dBm Modulated (WCDMA) Input Power, 6:1 output VSWR, 2-Stage Operation -6 dBm Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent Modulated (WCDMA) Input Power, 6:1 output VSWR, 3-Stage Operation 7 dBm damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce Storage Temperature Range -40 to +150 C device reliability. Specified typical performance or functional operation of the device under Absolute ESD Rating - Human Body Model (HBM) Class 1A Maximum Rating conditions is not implied. Moisture Sensitivity Level MSL3 Notes: 1. The maximum ratings must all be met simultaneously Recommended Operating Condition Parameter Specification Unit Min Typ Max Operating Temperature Range -40 +85 C 1& 2 165 C Operating Junction Temperature (T ) J 3 Collector Voltage (V , V , V ,) 2.7 5 5.25 V CC1 CC2 CC3 Notes: 1. T for 1e6 hours MTTF, CW Operation J 2. T = T + P * R J L DISS TH 3. Max recommended operational collector voltage Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max V = 5.0V, Temp = 25C, Optimized for -45dBc ACPR CC 728MHz to 768MHz at rated power Frequency 748 MHz Input Power -2 dBm Max recommended continuous input power, V = 5.0V, Load VSWR = 2:1 CC Gain 35 dB Stage 1 bypassed ACPR -48 dBc RF output power = 21dBm, WCDMA 3GPP 3.5, test model 1, 64 DPCH P1dB 31.5 dBm Output IP3 40 dBm 18dBm per tone, 1MHz spacing, optimized for best ACPR Detector Output Voltage 0.85 V CW RF output power = 21dBm with 0.3pF coupling capacitor Input Return Loss 20 dB RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140317 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, 2 of 25 trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc.

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Qorvo
Qorvo, Inc.
RF9
RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
TriQuint Semiconductor
TriQuint Semiconductor, Inc

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