Product Information

RFPA5201ETR13

RFPA5201ETR13 electronic component of Qorvo

Datasheet
RF Amplifier 2.4-2.5GHz Gain 33dB Pout 29dBm

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 14.4839
1000 : USD 9.0504
2500 : USD 7.4519
5000 : USD 6.2177
10000 : USD 5.2774
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Series
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Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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RFPA5201E RFPA5201E WiFi Power Amplifier 5.0V, 2.4GHz to 2.5GHz Package: Laminate, 14-pin, The RFPA5201E is an integrated Power Amplifier (PA) designed for 7.0mm x 7.0mm x 1.0mm high performance WiFi systems requiring up to +29dBm linear output power. The PA is manufactured on an advanced RFMD InGaP Features Heterojunction Bipolar Transistor (HBT) process for optimal efficiency P = 29dBm EVM = -30dB OUT and linearity (EVM). 11n MCS7 The RFPA5201E integrates the power detector, biasing and input/output Input and Output Matched to 50 match which reduces the number of external components and manufacturability cost. The device is mounted on a 14-pin, 7 x 7mm High Gain: 33dB LGA laminate package and meets the RF specifications for 802.11b/g/n Integrated Power Detector systems. High Impedance Enable Pin High PAE Design 1 14 VCC3 VCC PA EN 2 13 GND Applications IEEE 802.11b/g/n WiFi Systems GND 3 12 GND Customer Premise Equipment Input Output (CPE) RF In 4 11 RF Out Match Match Wireless Access Points, Gateways Bias & Routers Network GND 5 10 GND Microcells Power Detector PA EN 6 9 VCC3 PDet VREG 7 8 Functional Block Diagram Ordering Information RFPA5201ESB Standard 5 piece bag RFPA5201ESQ Standard 25 piece bag RFPA5201ESR Standard 100 piece reel RFPA5201ETR13 Standard 2500 piece reel RFPA5201EPCK-410 Fully assembled evaluation board w/5 piece bag RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140331 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. 1 of 7 RFPA5201E Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Supply Voltage (RF Applied) -0.5 to +5.5 V Supply Voltage (No RF Applied) -0.5 to +6.0 V RFMD Green: RoHS status based on EU DC Supply Current 1800 mA Directive 2011/65/EU (at time of this document revision), halogen free per IEC Input RF Power with 50W Output Load 10 dBm 61249-2-21, < 1000ppm each of antimony Maximum VSWR with no damage 10:1 trioxide in polymeric materials and red phosphorus as a flame retardant, and Operating Ambient Temperature -40 to +85 C <2% antimony in solder. Storage Temperature -40 to +150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent Moisture Sensitivity Level MSL3 damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max Compliance 802.11b/g/n Operating Frequency 2412 2484 MHz Supply Voltage 4.75 5 5.25 V 802.11n HT20 and HT40 MCS7 PA EN Voltage High 1.75 2.9 5 V Can be tied to Vreg when using 2.85v min and sources 12mA typ. PA EN Voltage Low 0 0.2 V Turns PA OFF V Voltage High 2.85 2.9 3 V REG Can be tied to PA EN. Requires 12mA typ and 2.85V min V Voltage Low 0 0.2 V REG V = 5.0V, V = 2.9V, PA EN = 2.9V 11n MCS7 HT20 and CC REG Typical Conditions HT40, temperature = 25C, unless otherwise noted Output Power 29 dBm 802.11n HT20 and HT40 MCS7 11n Dynamic EVM 2.5 3 % Second Harmonic -38 -36 dBm/MHz At rated P OUT Third Harmonic -48 -45 dBm/MHz Gain 31.5 33.5 dB Gain Variation +/-1 dB Over 40MHz channel +/-2.5 dB Over temperature of -40C to +85C Power Detect Range 0.1 2.2 V POUT = 0dBm to 30dBm Power Detect Voltage 1.8 1.9 2.0 V At rated P OUT Input Return Loss -15 -12 dB In specified frequency band Output Return Loss -10 -8 dB Operating Current 875 1000 mA At rated P OUT Quiescent Current 350 425 mA V = 5.0, V = PA EN = 2.9V and RF = OFF CC REG PAE (Power Added Efficiency) 18.5 % At rated P (PA only) OUT Power Down Current 16 mA PA EN = 0V, V = 5V, V = 2.9V CC REG I 12 15 mA V =5V, PA EN = 2.9V, V = 2.9V REG CC REG Leakage Current 0.5 0.7 mA V =5V, V = 0V, PA EN=0V CC REG RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140331 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 7

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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RFMD (Qorvo)
TriQuint
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