Product Information

Q62702-P1674

Q62702-P1674 electronic component of OSRAM

Datasheet
Phototransistor IR Chip Silicon 870nm
Manufacturer: OSRAM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

202: USD 0.366 ea
Line Total: USD 73.93

0 - Global Stock
MOQ: 202  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 202
Multiples : 1
202 : USD 0.366

Read More Specifications

     
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RoHS - XON
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Additional Infomation About Product

2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 SFH 313 FA Features: Besondere Merkmale: Spectral range of sensitivity: (typ) 740 ... 1080 Spektraler Bereich der Fotoempfindlichkeit: nm (typ) 740 ... 1080 nm Package: 5mm Radial (T 1 ), Epoxy Gehuse: 5mm Radial (T 1 ), Harz Special: 5 mm plastic package Besonderheit: 5 mm-Plastikbauform High photosensitivity Hohe Fotoempfindlichkeit Especially suitable for applications from 740 nm to Speziell geeignet fr Anwendungen im Bereich von 1080 nm 740 nm bis 1080 nm Applications Anwendungen Computer-controlled flashes Computer-Blitzlichtgerte Photointerrupters Lichtschranken Industrial electronics Industrieelektronik For control and drive circuits Messen / Steuern / Regeln Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 950 nm, E = 0.5 mW/cm , V = 5 V e CE I A PCE SFH 313 FA 2500 Q62702P1674 SFH 313 FA-2/3 4000 ... 12500 Q62702P3597 SFH 313 FA-3/4 6300 Q62702P5196 2014-01-14 1Version 1.1 SFH 313 FA Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Collector-emitter voltage V 70 V CE Kollektor-Emitter-Spannung Collector current I 50 mA C Kollektorstrom Collector surge current I 100 mA CS Kollektorspitzenstrom ( < 10 s) Emitter-collector voltage V 7V EC Emitter-Kollektor-Spannung Total power dissipation P 200 mW tot Verlustleistung Thermal resistance R 375 K / W thJA Wrmewiderstand Characteristics (T = 25 C, = 950 nm) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Wavelength of max. sensitivity 870 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 740 ... 1080 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A0.55 mm Bestrahlungsempfindliche Flche Dimensions of chip area L x W 1 x 1 mm x Abmessung der Chipflche mm 2014-01-14 2

HS Compliance

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

OSRAM may also be referenced as

AMS OSRAM
OS4
OSRAM DS
OSRAM OPTO SEMI
OSRAM Opto Semicon
OSRAM Opto Semiconductors
OSRAM Opto Semiconductors Inc
OSRAM Opto Semiconductors Inc.
OSRAM Sylvania

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