Product Information

VTT7125H

VTT7125H electronic component of Excelitas

Datasheet
Phototransistor; 100V; 36°; 400-1050nm; 0.19mm2

Manufacturer: Excelitas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3162 ea
Line Total: USD 1.32

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

Stock Image

VTT7125H
Excelitas

1 : USD 1.3162
5 : USD 1.1941
25 : USD 1.1534

     
Manufacturer
Product Category
Mounting
Type Of Photodetector
Viewing Angle
Active Area
Light Current Uce 5V L 950Nm
Wavelength
Collector-Emitter Voltage
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photodiode S & -t r an SiSt or S for high-volu Me a pplication S Phototransistors VTT Series CR Series - PHOTO TRAn SISTORS FOR In DuSTRIAL An D cOMMER c IAL APPLIc ATIOn S Phototransistors VTT Series c R Series a pplications Coin counters Position sensors Remote controllers Ambient light sensing Street light switching Oil burner flame monitoring Safety shields Margin control-printers Monitor paper position and stack height features and Benefits Low cost visible and near IR photo detection product description Low dark current Phototransistors are photodiode-amplifier combinations integrated within a single silicon chip. The phototransistor can be viewed as a photodiode whose output current is fed into the base of a Available in package with integrated visible filtering conventional transistor. These photodiode-amplifier combinations are put together to overcome the major limitation of Available in package with integrated IR filtering photodiodes: unity gain. The typical gain of a phototransistor can range from 100 to over 1500. Many applications demand a greater output than can be generated by a photodiode alone. Even Available in a wide range of packages though the signal of a photodiode can be amplified through external circuitry (operational RoHs compliant amplifier for example) this is not always cost effective. In such cases, phototransistors provide a lower cost alternative. Figure 1 c R50te Package Drawing Vt t Series t -1 Package Surface mounting device Solid state ceramic chip High thermal conductivity Special type (CR50TE-DLF) with daylight filter on request www.excelitas.com 34Product Table Phototransistors Vt t Series c R Series c ollector Emitter Saturation Exposed Light c urrent Breakdown Breakdown Voltage Rise/Fall Time Active 100 fc, Dark c urrent I = 100 A, I = 100 A, I = 100 A, Ic = 1.0 mA Angular Spectral c c c Package Area V = 5 V V = 10 V 0 fc 0 fc 100 fc RL = 100 Response Range c E c E min max min min max Typical Typical Symbol Ic VBR(c EO) VBR(c EO) Vc E(SAT) tR / tF 1/2 RAn GE 2 u nit mm mA nA V V V S nm Vt t 1222WH T-1 0.19 1.9 10 VCE = 20 V 50 6.0 0.25 2.0 40 400 -1050 Vt t 1223WH T-1 0.19 1.5 10 VCE = 20 V 40 6.0 0.25 3.0 40 400 -1050 Vt t 1225H T-1 0.19 4.0 100 30 5.0 0.25 1.5 5 400 -1050 Vt t 1226H T-1 0.19 7.5 100 30 5.0 0.25 3.0 5 400 -1050 Vt t 1227H T-1 0.19 12.0 100 30 5.0 0.25 4.0 5 400 -1050 Vt t 3122eH Coax hermetic 0.19 1.2 100 VCE = 20 V 40 6.0 0.25 2.5 8 400 -1050 Vt t 3123eH Coax hermetic 0.19 4.0 100 30 4.0 0.25 4.0 8 400 -1050 Vt t 3323LAH Long T-1 0.19 2.0 20 fc 100 30 5.0 0.25 3.0 10 400 -1050 Vt t 3324LAH Long T-1 0.19 4.0 20 fc 100 30 5.0 0.25 4.0 10 400 -1050 Vt t 3325LAH Long T-1 0.19 6.0 20 fc 100 30 5.0 0.25 5.0 10 400 -1050 Vt t 3423LAH Long T-1 0.19 1.0 20 fc 100 30 5.0 0.25 3.0 10 700 -1050 Vt t 3424LAH Long T-1 0.19 2.0 20 fc 100 30 5.0 0.25 4.0 10 700 -1050 Vt t 3425LAH Long T-1 0.19 3.0 20 fc 100 30 5.0 0.25 5.0 10 700 -1050 Vt t 7122H Lateral 0.19 1.0 100 30 5.0 0.25 2.0 36 400 -1050 Vt t 7123H Lateral 0.19 2.0 100 30 5.0 0.25 2.0 36 400 -1050 Vt t 7125H Lateral 0.19 4.5 100 30 5.0 0.25 2.0 36 400 -1050 Vt t 7222H Lateral 0.19 0.9 100 30 5.0 0.25 2.0 36 700 -1050 Vt t 7223H Lateral 0.19 1.8 100 30 5.0 0.25 2.0 36 700 -1050 Vt t 7225H Lateral 0.19 4.0 100 30 5.0 0.25 4.0 36 700 -1050 Vt t 1212H T-1 0.63 2.0 20 fc 100 30 5.0 0.25 4.0 10 400 -1050 Vt t 1214H T-1 0.63 4.0 20 fc 100 30 5.0 0.25 6.0 10 400 -1050 Vt t 9002H TO-106 flat 0.63 2.0 100 30 6.0 0.55 4.0 50 400 -1050 Vt t 9003H TO-106 flat 0.63 5.0 100 30 6.0 0.55 6.0 50 400 -1050 Vt t 9102H TO-106 lensed 0.63 6.0 100 VCE = 5 V 30 4.0 0.55 6.0 42 400 -1050 Vt t 9103H TO-106 lensed 0.63 13.0 100 VCE = 5 V 30 4.0 0.55 10.0 42 400 -1050 Vt t 1015H TO-46 0.4 25 VCE = 20 V 40 6.0 0.40 5.0 35 400 -1050 Vt t 1016H TO-46 1.0 25 VCE = 20 V 30 6.0 0.40 5.0 35 400 -1050 Vt t 1017H TO-46 2.5 25 20 4.0 0.40 8.0 35 400 -1050 Vt t 1115H TO-46 lensed 1.0 20 fc 100 30 6.0 0.40 5.0 15 400 -1050 Vt t 1116H TO-46 lensed 2.0 20 fc 100 30 4.0 0.40 8.0 15 400 -1050 Vt t 1117H TO-46 lensed 4.0 20 fc 100 30 4.0 0.40 8.0 15 400 -1050 Vt t 9812FH T-1 flat 0.19 0.10 100 30 5.0 0.25 1.5 56 450 - 700 c R50t e Ceramic 0.18 400 VCE = 20 V 40 0.3 IC= 2 mA 4.0 RL = 50 Wide viewing 400 -1070 SMD (A2) angle Figure 2 Figure 3 Package Drawing Vt t Series t -1 Package Package Drawing Vt t Series t o -46 Package www.excelitas.com 35 Phototransistors VTT Series CR Series I c ED

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

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