Product Information

SZNUP2301MW6T1G

SZNUP2301MW6T1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor ESD Suppressors MI LO CAP DIODE ARRY
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.283 ea
Line Total: USD 0.28

2466 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2466 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

SZNUP2301MW6T1G
ON Semiconductor

1 : USD 0.283
10 : USD 0.2551
100 : USD 0.2374
500 : USD 0.2288
1000 : USD 0.2158
3000 : USD 0.2114
6000 : USD 0.2114
9000 : USD 0.2114

2466 - Warehouse 2


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 35
Multiples : 1

Stock Image

SZNUP2301MW6T1G
ON Semiconductor

35 : USD 0.2551
100 : USD 0.2374
500 : USD 0.2288
1000 : USD 0.2158
3000 : USD 0.2114

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
Vf - Forward Voltage
LoadingGif

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Additional Infomation About Product

NUP2301MW6T1G, SZNUP2301MW6T1G Low Capacitance Diode Array for ESD Protection in Two Data Lines NUP2301MW6T1G, SZNUP2301MW6T1G MAXIMUM RATINGS (Each Diode) (T = 25C unless otherwise noted) J Rating Symbol Value Unit Reverse Voltage V 70 Vdc R Forward Current I 200 mAdc F Peak Forward Surge Current I 500 mAdc FM(surge) Repetitive Peak Reverse Voltage V 70 V RRM Average Rectified Forward Current (Note 1) (Averaged over any 20 ms Period) I 715 mA F(AV) Repetitive Peak Forward Current I 450 mA FRM NonRepetitive Peak Forward Current I A FSM t = 1.0 s 2.0 t = 1.0 ms 1.0 t = 1.0 S 0.5 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR5 = 1.0 0.75 0.062 in. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoAmbient R 625 C/W JA Lead Solder Temperature T C L Maximum 10 Seconds Duration 260 Junction Temperature T 55 to +150 C J Storage Temperature T 55 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Each Diode) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V Vdc (BR) (I = 100 A) 70 (BR) Reverse Voltage Leakage Current I Adc R (V = 70 Vdc) 2.5 R (V = 25 Vdc, T = 150C) 30 R J (V = 70 Vdc, T = 150C) 50 R J Capacitance (between I/O pins) C pF D (V = 0 V, f = 1.0 MHz) 1.0 2.0 R Capacitance (between I/O pin and ground) C pF D (V = 0 V, f = 1.0 MHz) 1.6 3 R Forward Voltage V mV F dc (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F 2. FR5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. Include SZ-prefix devices where applicable.

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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