Product Information

SZTVS4201MR6T1G

SZTVS4201MR6T1G electronic component of ON Semiconductor

Datasheet
ESD Suppressors / TVS Diodes MI TSOP6 LO CAP DIOD

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6615 ea
Line Total: USD 0.66

120575 - Global Stock
Ships to you between
Fri. 17 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
143393 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

SZTVS4201MR6T1G
ON Semiconductor

1 : USD 0.5635
10 : USD 0.491
100 : USD 0.3485
500 : USD 0.299
1000 : USD 0.2622
3000 : USD 0.2369
6000 : USD 0.23
9000 : USD 0.2289
24000 : USD 0.2265

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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TVS4201MR6 Transient Voltage Suppressors Low Clamping Voltage Surge Protection Diode Array www.onsemi.com The TVS4201MR6 transient voltage suppressor is designed to protect high speed data lines from ESD, EFT, and lightning surges. 6 Features 1 Protection for the Following IEC Standards: TSOP6 IEC 6100042 (ESD) 30 kV (Contact) CASE 318G IEC 6100045 (Lightning) 25 A (8/20 s) Low Clamping Voltage MARKING DIAGRAM Low Leakage UL Flammability Rating of 94 V0 42 M SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 42 = Specific Device Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS M = Date Code Compliant = PbFree Package (Note: Microdot may be in either location) Typical Applications *Date Code orientation may vary High Speed Communication Line Protection depending upon manufacturing location. USB 1.1 and 2.0 Power and Data Line Protection Digital Video Interface (DVI) PIN CONFIGURATION AND SCHEMATIC Monitors and Flat Panel Displays I/O 1 6 I/O MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit V 2 5 V N P Peak Power Dissipation P 500 W pk 8/20 s T = 25C (Note 1) A I/O 3 4 I/O Operating Junction Temperature Range T 40 to +125 C J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T L ORDERING INFORMATION Maximum (10 Seconds) 260 C IEC 6100042 Air (ESD) ESD 30 kV Device Package Shipping IEC 6100042 Contact (ESD) 30 TVS4201MR6T1G TSOP6 3000 / Tape & IEC 6100044 (5/50 ns) EFT 40 A (PbFree) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the SZTVS4201MR6T1G TSOP6 3000 / Tape & device. If any of these limits are exceeded, device functionality should not be (PbFree) Reel assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 1 (Pin 5 to Pin 2) For information on tape and reel specifications, including part orientation and tape sizes, please See Application Note AND8308/D for further description of refer to our Tape and Reel Packaging Specification survivability specs. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2015 Rev. 1 TVS4201MR6/DTVS4201MR6 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM V I V R F I Maximum Reverse Leakage Current V R RWM I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F P Peak Power Dissipation pk UniDirectional TVS C Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T =25C unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 2) 5.0 V RWM Breakdown Voltage V I =1 mA, (Note 3) 6.0 V BR T Reverse Leakage Current I V = 5 V 1.0 A R RWM Clamping Voltage V I = 1 A, Any I/O to GND 8.5 V C PP (t = 8/20 s per Figure 1) p I = 5 A, Any I/O to GND 9.0 PP I = 8 A, Any I/O to GND 10 PP I = 25 A, Any I/O to GND 12 PP Junction Capacitance C V = 0 V, f=1 MHz between I/O Pins and GND 3.0 5.0 pF J R Junction Capacitance C V = 0 V, f=1 MHz between I/O Pins 1.5 3.0 pF J R 2. TVS devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater than the DC RWM or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T 20 100 t PEAK VALUE I 8 s r RSM 90 18 PULSE WIDTH (t ) IS DEFINED P 16 80 AS THAT POINT WHERE THE 14 70 PEAK CURRENT DECAY = 8 s 60 12 HALF VALUE I /2 20 s RSM I/OGND 50 10 40 8 30 6 t P 4 20 10 2 0 0 020 40 60 80 05 10 15 20 25 30 t, TIME ( s) PEAK PULSE CURRENT (A) Figure 1. IEC6100045 8/20 s Pulse Waveform Figure 2. Clamping Voltage vs. Peak Pulse Current (t = 8/20 s per Figure 1) p www.onsemi.com 2 % OF PEAK PULSE CURRENT CLAMPING VOLTAGE (V)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
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FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
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OOF
Xsens / Fairchild

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