Product Information

T2322BG

T2322BG electronic component of ON Semiconductor

Datasheet
TRIAC Logic - Sensitive Gate 200 V 2.5 A Through Hole TO-225AA

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6345 ea
Line Total: USD 0.63

4429 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4327 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

T2322BG
ON Semiconductor

1 : USD 1.265
10 : USD 1.0522
100 : USD 0.8395
500 : USD 0.7314
1000 : USD 0.5888
2500 : USD 0.5842
5000 : USD 0.5842
10000 : USD 0.5681
25000 : USD 0.5612

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Thyristors Surface Mount 200V > T2322B Pb T2322B Description Designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances their use in low-power phase control and load- switching applications. Features Very High Gate Sensitivity PbFree Package is Available Low On-State Voltage at High Current Levels Glass-Passivated Chip for Stability Small, Rugged Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Pin Out Functional Diagram MT2 MT1 G T0-225A A Case 77 Style 2 3 2 1 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20Thyristors Surface Mount 200V > T2322B Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) V , DRM 200 V (T = 25 to 110C, Gate Open) V J RRM On-State RMS Current (T = 70C)(Full Cycle Sine Wave 50 to 60 Hz) I 2.5 A C T (RMS) Peak NonRepetitive Surge Current I 25 A TSM (One Full Cycle, Sine Wave 60 Hz, T = 70C) C 2 Circuit Fusing Considerations (t = 8.3 ms) I t 2.6 A2s Peak Gate Power (Pulse Width 10 sec, T = 70C) P 10 W C GM Average Gate Power (t = 8.3 msec, T = 25C) P 0.5 W A GM (AV) Peak Gate Current (Pulse Width = 10 s, T = 70C) I 0.5 A C GM Operating Junction Temperature Range Rated V and V T -40 to +110 C RRM DRM J Storage Temperature Range T -40 to +150 C stg Mounting Torque (6-32 Screw) (Note 2) 8.0 in. lb. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting Torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heat-sink contact pad are common. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, JunctiontoAmbient PCB Mounted R 3.5 C/W JA Thermal Resistance, JunctiontoTab Measured on MT2 Tab Adjacent to Epoxy R 60 C/W JT Maximum Device Temperature for Soldering Purposes for 10 Secs Maximum T 260 C L Electrical Characteristics - OFF (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit - - 1.0 Peak Repetitive Forward or Reverse Blocking Current T = 25C I , J DRM mA (V = Rated V and V Gate Open) T = 110C I - 0.2 0.75 D DRM RRM J RRM Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak Forward On-State Voltage (Note 3) (I = 10 A) V 1.7 2.2 V TM TM Gate Trigger Current (Continuous dc) I 10 mA GT (V = 12 V, R = 100 , All Quadrants) D L Gate Trigger Voltage (Continuous dc) V 1.0 2.2 V GT (V = 12 Vdc, R = 100 , T = 25C) D L C Gate NonTrigger Voltage V 0.15 V GD (V = 12 Vdc, R = 100 , T = 110C) D L C Holding Current I 15 30 mA H (VD = 12 V, IT (Initiating Current) = 200 mA, Gate Open) Gate Controlled Turn-On Time t 1.8 2.5 s gt (V = Rated V , I = 10 A pk, I = 60 mA, tr = 0.1 sec) D DRM TM G 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20

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