Product Information

NTD4963NT4G

NTD4963NT4G electronic component of ON Semiconductor

Datasheet
MOSFET NFET DPAK 30V 44A 9.6MOHM

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2137: USD 0.1813 ea
Line Total: USD 387.44

0 - Global Stock
MOQ: 2137  Multiples: 2137
Pack Size: 2137
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 2500
Multiples : 1

Stock Image

NTD4963NT4G
ON Semiconductor

2500 : USD 0.198
5000 : USD 0.1943

0 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 2137
Multiples : 2137

Stock Image

NTD4963NT4G
ON Semiconductor

2137 : USD 0.1813

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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NTD4963N Power MOSFET 30 V, 44 A, Single NChannel, DPAK/IPAK Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTD4963N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 4.1 C/W JC JunctiontoTAB (Drain) R 3.5 JC TAB JunctiontoAmbient Steady State (Note 3) R 77 JA JunctiontoAmbient Steady State (Note 4) R 118 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 25 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.45 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 5 GS(TH) J mV/C Coefficient DraintoSource On Resistance R V = 10 V I = 30 A 8.2 9.6 DS(on) GS D I = 15 A 8.2 D m V = 4.5 V I = 30 A 13.6 16 GS D I = 15 A 13.6 D Forward Transconductance g V = 1.5 V, I = 30 A 40 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1035 ISS Output Capacitance C V = 0 V, f = 1.0 MHz, V = 12 V 220 pF OSS GS DS Reverse Transfer Capacitance C 115 RSS Total Gate Charge Q 8.1 G(TOT) Threshold Gate Charge Q 1.2 G(TH) V = 4.5 V, V = 15 V, I = 30 A nC GS DS D GatetoSource Charge Q 3.5 GS GatetoDrain Charge Q 3.5 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 30 A 16.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 12 d(ON) Rise Time t 20 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 14 d(OFF) Fall Time t 3 f 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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