X-On Electronics has gained recognition as a prominent supplier of NTDV3055L104T4G mosfet across the USA, India, Europe, Australia, and various other global locations. NTDV3055L104T4G mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

NTDV3055L104T4G ON Semiconductor

NTDV3055L104T4G electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.NTDV3055L104T4G
Manufacturer: ON Semiconductor
Category:MOSFET
Description: ON Semiconductor MOSFET NFET 60V 12A 0.104R
Datasheet: NTDV3055L104T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.8747
10 : USD 0.5039
25 : USD 0.4939
N/A

Obsolete
0 - WHS 2


Multiples : 2500
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 2.145
10 : USD 1.0211
100 : USD 0.5268
500 : USD 0.4477
1000 : USD 0.3921
2500 : USD 0.3601
5000 : USD 0.3483
N/A

Obsolete
0 - WHS 4

MOQ : 22
Multiples : 1
22 : USD 0.5249
25 : USD 0.4939
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Qualification
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the NTDV3055L104T4G from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTDV3055L104T4G and other electronic components in the MOSFET category and beyond.

NTD3055L104, NTDV3055L104 MOSFET Power, N-Channel, Logic Level, DPAK/IPAK 12 A, 60 V Designed for low voltage, high speed switching applications in power www.onsemi.com supplies, converters and power motor controls and bridge circuits. Features V R TYP I MAX (BR)DSS DS(on) D Lower R DS(on) 60 V 104 m 12 A Lower V DS(on) Tighter V Specification SD D Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge NTDV and STDV Prefixes for Automotive and Other Applications NChannel Requiring Unique Site and Control Change Requirements G AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant S Typical Applications 4 Power Supplies Converters 4 Power Motor Controls Bridge Circuits 1 2 1 2 3 3 MAXIMUM RATINGS (T = 25C unless otherwise noted) J DPAK IPAK Rating Symbol Value Unit CASE 369C CASE 369D DraintoSource Voltage V 60 Vdc DSS STYLE 2 STYLE 2 DraintoGate Voltage (R = 10 M ) V 60 Vdc GS DGR MARKING DIAGRAMS GatetoSource Voltage, Continuous V 15 Vdc GS NonRepetitive (t 10 ms) V 20 & PIN ASSIGNMENTS p GS Drain Current 4 4 Continuous T = 25C I 12 Adc Drain Drain A D Continuous T = 100C I 10 A D I 45 Apk Single Pulse (t 10 s) p DM Total Power Dissipation T = 25C P 48 W A D Derate above 25C 0.32 W/C Total Power Dissipation T = 25C (Note 1) 2.1 W A Total Power Dissipation T = 25C (Note 2) 1.5 W A 2 1 3 Operating and Storage Temperature Range T , T 55 to C Drain J stg Gate Source +175 1 2 3 Gate Drain Source Single Pulse DraintoSource Avalanche E 61 mJ AS Energy Starting T = 25C J A = Assembly Location* (V = 25 Vdc, V = 5.0 Vdc, L = 1.0 mH DD GS 55L104 = Device Code I = 11 A, V = 60 Vdc) L(pk) DS Y = Year Thermal Resistance, JunctiontoCase R 3.13 C/W JC WW = Work Week JunctiontoAmbient (Note 1) R 71.4 JA G = PbFree Package JunctiontoAmbient (Note 2) R 100 JA * The Assembly Location code (A) is front side Maximum Lead Temperature for Soldering T 260 C L optional. In cases where the Assembly Location is Purposes, 1/8 from case for 10 seconds stamped in the package, the front side assembly Stresses exceeding those listed in the Maximum Ratings table may damage the code may be blank. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 pad size, ORDERING INFORMATION 2 (Cu Area 1.127 in ). See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 10 NTD3055L104/D AYWW 55L 104G AYWw 55L 104GNTD3055L104, NTDV3055L104 2. When surface mounted to an FR4 board using the minimum recommended 2 pad size, (Cu Area 0.412 in ). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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