Product Information

FDB33N25TM

FDB33N25TM electronic component of ON Semiconductor

Datasheet
Transistor: N-MOSFET; unipolar; 250V; 33A; 235W; D2PAK

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

800: USD 1.1711 ea
Line Total: USD 936.88

1552 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
639 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

FDB33N25TM
ON Semiconductor

1 : USD 2.249
5 : USD 1.976
10 : USD 1.703
27 : USD 1.612
800 : USD 1.547

1552 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 800
Multiples : 800

Stock Image

FDB33N25TM
ON Semiconductor

800 : USD 1.1711

     
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
Category
Brand Category
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FDB33N25TM is a N-channel power MOSFET manufactured by ON Semiconductor. It has a maximum current rating of 33A and a maximum voltage rating of 25V. It is ideal for use as a switch or in a high-power amplifier. The MOSFET has an on-resistance of 1.0m?, a breakdown voltage of 40V, and a gate voltage of 10V. The maximum power dissipation is 90W and the thermal resistance is 0.75K/W. It has a lead-free package and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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