Product Information

FDB3632

FDB3632 electronic component of ON Semiconductor

Datasheet
Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4: USD 1.8975 ea
Line Total: USD 7.59

181 - Global Stock
Ships to you between
Mon. 13 May to Fri. 17 May
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
7760 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 800
Multiples : 800

Stock Image

FDB3632
ON Semiconductor

800 : USD 1.885
1600 : USD 1.885
2400 : USD 1.885
3200 : USD 1.885

4656 - WHS 2


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 800
Multiples : 800

Stock Image

FDB3632
ON Semiconductor

800 : USD 2.4024

181 - WHS 3


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 4
Multiples : 1

Stock Image

FDB3632
ON Semiconductor

4 : USD 1.8975
10 : USD 1.8595

     
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
LoadingGif

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MOSFET Power, N-Channel, POWERTRENCH 100 V, 80 A, 9 m FDH3632, FDP3632, FDB3632 www.onsemi.com Features R = 7.5 m (Typ.), V = 10 V, I = 80 A DS(ON) GS D Q (tot) = 84 nC (Typ.), V = 10 V g GS V R MAX I MAX DSS DS(ON) D Low Miller Charge 100 V 9 m 80 A Low Q Body Diode rr UIS Capability (Single Pulse and Repetitive Pulse) D These Devices are PbFree and are RoHS Compliant Applications G Synchronous Rectification Battery Protection Circuit S Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter TO2473 CASE 340CK G D S TO2203 CASE 340AT G D S D2PAK3 CASE 418AJ MARKING DIAGRAM Y&Z&3&K FDX3632 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FDX3632 = Specific Device Code X = H/P/B ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2020 Rev. 5 FDP3632/DFDH3632, FDP3632, FDB3632 MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GS I Drain Current A Continuous (T < 111C, V = 10 V) 80 D C GS Continuous (T = 25C, V = 10 V, 12 amb GS R = 43C/W) JA I Drain Current Pulsed Figure 4 A D E Single Pulse Avalanche Energy (Note 1) 337 mJ AS P Power Dissipation (T = 25C) 310 W D C Derate Above 25C 2.07 W/C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Starting T = 25C, L = 0.12mH, I = 75 A, V = 80 V. J AS DD THERMAL CHARACTERISTICS Symbol Parameter Value Unit 2 R Thermal Resistance, Junction to Case, Max. TO220, D PAK, TO247 0.48 C/W JC R Thermal Resistance, Junction to Ambient, Max. TO220 (Note 2) 62 C/W JA 2 2 R Thermal Resistance, Junction to Ambient, D PAK, Max. 1 in copper pad area 43 C/W JA R Thermal Resistance, Junction to Ambient, Max. TO247 (Note 2) 30 C/W JA 2. Pulse Width = 100 s PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity 2 FDB3632 FDB3632 D PAK 330 mm 24 mm 800 Units FDP3632 FDP3632 TO220 Tube N/A 50 Units FDH3632 FDH3632 TO247 Tube N/A 30 Units www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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