X-On Electronics has gained recognition as a prominent supplier of FDB3632_F085 mosfet across the USA, India, Europe, Australia, and various other global locations. FDB3632_F085 mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

FDB3632_F085

FDB3632_F085 electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.FDB3632_F085
Manufacturer: ON Semiconductor
Category:MOSFET
Description: Fairchild Semiconductor MOSFET 100V N-Channel PowerTrench MOSFET
Datasheet: FDB3632_F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 800
Multiples : 800
800 : USD 2.8354
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 5.96
10 : USD 3.9446
25 : USD 3.7774
100 : USD 3.3206
500 : USD 2.8637
N/A

Obsolete
0 - WHS 3

MOQ : 3
Multiples : 1
3 : USD 3.2544
10 : USD 2.871
25 : USD 2.6178
100 : USD 2.5654
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDB3632-F085 FDB3632-F085 N-Channel PowerTrench MOSFET Applications 100V, 80A, 9m DC/DC converters and Off-Line UPS Features Distributed Power Architectures and VRMs r = 7.5m (Typ.), V = 10V, I = 80A DS(ON) GS D Primary Switch for 24V and 48V Systems Q (tot) = 84nC (Typ.), V = 10V g GS High Voltage Synchronous Rectifier Low Miller Charge Low Q Body Diode Direct Injection / Diesel Injection Systems RR UIS Capability (Single Pulse and Repetitive Pulse) 42V Automotive Load Control Qualified to AEC Q101 Electronic Valve Train Systems RoHS Compliant D DRAIN (FLANGE) GATE G SOURCE TO-263AB S FDB SERIES MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GS Drain Current o 80 A Continuous (T < 111 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, R = 43 C/W) 12 A amb GS JA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 338 mJ AS Power dissipation 310 W P D o o Derate above 25C2.07W/ C o T , T Operating and Storage Temperature -55 to +175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220, TO-263, TO-262 0.48 C/W JC o R Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) 62 C/W JA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W JA Publication Order Number: 2012 Semiconductor Components Industries, LLC. August-2017, Rev. 3 FDB3632-F085/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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