Product Information

FCB110N65F

FCB110N65F electronic component of ON Semiconductor

Datasheet
Fairchild Semiconductor MOSFET

Manufacturer: ON Semiconductor
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Price (USD)

2: USD 4.138 ea
Line Total: USD 8.28

74 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
97 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 24
Multiples : 1

Stock Image

FCB110N65F
ON Semiconductor

24 : USD 5.1491

74 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 2
Multiples : 1

Stock Image

FCB110N65F
ON Semiconductor

2 : USD 4.138

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCB110N65F N-Channel SuperFET II FRFET MOSFET August 2016 FCB110N65F N-Channel SuperFET II FRFET MOSFET 650 V, 35 A, 110 m Features Description 700 V T = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new J high voltage super-junction (SJ) MOSFET family that is utilizing Typ. R = 96 m (Typ.) DS(on) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Q = 98 nC) and lower gate charge performance. g SuperFET II FRFET MOSFET combines a faster and more Low Effective Output Capacitance (Typ. C = 464 pF) oss(eff.) rugged intrinsic body diode performance with fast switching, 100% Avalanche Tested aimed at achieving better reliability and efficiency especially in resonant switching applications. RoHS Compliant SuperFET II FRFET is very suitable for the switching power Applications applications such as server/telecom power, Solar inverter, FPD TV power, computing power, lighting and industrial power appli- Telecom/Server Power Supplies Solar Inverters cations. Computing Power Supplies FPD TV Power/Lighting D D G G 2 S D -PAK S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCB110N65F Unit V Drain to Source Voltage 650 V DSS - DC 20 V Gate to Source Voltage V GSS - AC 30 o - Continuous (T = 25 C) 35 C I Drain Current A D o - Continuous (T = 100 C) 24 C I Drain Current - Pulsed (Note 1) 105 A DM E Single Pulsed Avalanche Energy (Note 2) 809 mJ AS I Avalanche Current (Note 1) 8 A AR E Repetitive Avalanche Energy (Note 1) 3.57 mJ AR MOSFET dv/dt (Note 3) 100 dv/dt V/ns Peak Diode Recovery dv/dt 50 o (T = 25 C) 357 W C P Power Dissipation D o o - Derate Above 25C2.86W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter Unit FCB110N65F R Thermal Resistance, Junction to Case 0.35 JC o Thermal Resistance, Junction to Ambient (Mimimum Pad of 2-oz copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (1 in Pad of 2-oz copper), Max. 40 1 www.fairchildsemi.com 2015 Fairchild Semiconductor Corporation FCB110N65F Rev. 1.1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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FSC
ON
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ON Semicon
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ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
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OOF
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