X-On Electronics has gained recognition as a prominent supplier of FCD7N60TM_WS mosfet across the USA, India, Europe, Australia, and various other global locations. FCD7N60TM_WS mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

FCD7N60TM_WS ON Semiconductor

Hot FCD7N60TM_WS electronic component of ON Semiconductor
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See Product Specifications
Part No.FCD7N60TM_WS
Manufacturer: ON Semiconductor
Category:MOSFET
Description: Fairchild Semiconductor MOSFET Trans N-Ch 600V 7A 3-Pin 2Tab
Datasheet: FCD7N60TM_WS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7: USD 1.1534 ea
Line Total: USD 8.07

Availability - 75
Ships to you between
Tue. 04 Jun to Mon. 10 Jun
MOQ: 7  Multiples: 1
Pack Size: 1
Availability Price Quantity
75 - WHS 1


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1534
500 : USD 1.1277
2500 : USD 1.1224

90 - WHS 2


Ships to you between Mon. 10 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 2.461
10 : USD 2.047
100 : USD 1.6215
250 : USD 1.5065
500 : USD 1.357
1000 : USD 1.1845

75 - WHS 3


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 7
Multiples : 1
7 : USD 1.1534
500 : USD 1.1277
2500 : USD 1.1224

     
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCD7N60 N-Channel SuperFET MOSFET December 2013 FCD7N60 N-Channel SuperFET MOSFET 600 V, 7 A, 600 m Features Description 650 V T = 150C SuperFET MOSFET is Fairchild Semiconductors first genera- J tion of high voltage super-junction (SJ) MOSFET family that is Typ. R = 530 m DS(on) utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Q = 23 nC) g resistance and lower gate charge performance. This technology Low Effective Output Capacitance (Typ. C = 60 pF) is tailored to minimize conduction loss, provide superior switch- oss(eff.) ing performance, dv/dt rate and higher avalanche energy. Con- 100% Avalanche Tested sequently, SuperFET MOSFET is very suitable for the switching RoHS Compliant power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Application LCD / LED TV and Monitor Lighting Solar Inverter AC-DC Power Supply D D G G S D-PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C FCD7N60TM / Symbol Parameter Unit FCD7N60TM WS V Drain to Source Voltage 600 V DSS o - Continuous (T = 25 C) 7 C I Drain Current A D o - Continuous (T = 100 C) 4.4 C I Drain Current - Pulsed (Note 1) 21 A DM V Gate to Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 230 mJ AS I Avalanche Current (Note 1) 7A AR E Repetitive Avalanche Energy (Note 1) 8.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 83 W C P Power Dissipation D o o - Derate Above 25C0.67W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics FCD7N60TM / Symbol Parameter Unit FCD7N60TM WS R Thermal Resistance, Junction to Case, Max. 1.5 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 83 JA 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCD7N60 Rev. C1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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