Product Information

FCD7N60TM_WS

FCD7N60TM_WS electronic component of ON Semiconductor

Datasheet
Fairchild Semiconductor MOSFET Trans N-Ch 600V 7A 3-Pin 2Tab

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2305 ea
Line Total: USD 1.23

6395 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
75 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

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FCD7N60TM_WS
ON Semiconductor

1 : USD 1.1933
10 : USD 1.1855
100 : USD 1.1229
500 : USD 1.1004
1000 : USD 1.1004
2500 : USD 1.1004

2425 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

FCD7N60TM_WS
ON Semiconductor

1 : USD 1.2966
10 : USD 1.2761
25 : USD 1.2557
100 : USD 1.2352
250 : USD 1.2105
500 : USD 1.2105
1000 : USD 1.2105

6395 - WHS 3


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

FCD7N60TM_WS
ON Semiconductor

1 : USD 1.2305
500 : USD 1.219
2500 : USD 1.0362

2425 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 7
Multiples : 1

Stock Image

FCD7N60TM_WS
ON Semiconductor

7 : USD 1.2966
10 : USD 1.2761
25 : USD 1.2557
100 : USD 1.2352
250 : USD 1.2105

75 - WHS 5


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 7
Multiples : 1

Stock Image

FCD7N60TM_WS
ON Semiconductor

7 : USD 1.1933
10 : USD 1.1855
100 : USD 1.1229
500 : USD 1.1004

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCD7N60 N-Channel SuperFET MOSFET December 2013 FCD7N60 N-Channel SuperFET MOSFET 600 V, 7 A, 600 m Features Description 650 V T = 150C SuperFET MOSFET is Fairchild Semiconductors first genera- J tion of high voltage super-junction (SJ) MOSFET family that is Typ. R = 530 m DS(on) utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Q = 23 nC) g resistance and lower gate charge performance. This technology Low Effective Output Capacitance (Typ. C = 60 pF) is tailored to minimize conduction loss, provide superior switch- oss(eff.) ing performance, dv/dt rate and higher avalanche energy. Con- 100% Avalanche Tested sequently, SuperFET MOSFET is very suitable for the switching RoHS Compliant power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Application LCD / LED TV and Monitor Lighting Solar Inverter AC-DC Power Supply D D G G S D-PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C FCD7N60TM / Symbol Parameter Unit FCD7N60TM WS V Drain to Source Voltage 600 V DSS o - Continuous (T = 25 C) 7 C I Drain Current A D o - Continuous (T = 100 C) 4.4 C I Drain Current - Pulsed (Note 1) 21 A DM V Gate to Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 230 mJ AS I Avalanche Current (Note 1) 7A AR E Repetitive Avalanche Energy (Note 1) 8.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 83 W C P Power Dissipation D o o - Derate Above 25C0.67W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics FCD7N60TM / Symbol Parameter Unit FCD7N60TM WS R Thermal Resistance, Junction to Case, Max. 1.5 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 83 JA 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCD7N60 Rev. C1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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