FCB11N60 600V N-Channel MOSFET December 2008 TM SuperFET FCB11N60 600V N-Channel MOSFET Features Description TM 650V T = 150C SuperFET is, Fairchilds proprietary, new generation of high J voltage MOSFET family that is utilizing an advanced charge Typ. R = 0.32 DS(on) balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Q = 40nC) lower gate charge performance. g Low effective output capacitance (typ. C .eff = 95pF) This advanced technology has been tailored to minimize con- oss duction loss, provide superior switching performance, and with- 100% avalanche tested stand extreme dv/dt rate and higher avalanche energy. RoHS Compliant Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system min- iaturization and higher efficiency. D D zz zz G zz G S S Absolute Maximum Ratings Symbol Parameter FCB11N60 Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25C) 11 A D C - Continuous (T = 100C) 7 A C (Note 1) I Drain Current - Pulsed A DM 33 V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 340 mJ AS (Note 1) I Avalanche Current 11 A AR (Note 1) E Repetitive Avalanche Energy 12.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 125 W D C - Derate above 25C 1.0 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FCB11N60 Unit R Thermal Resistance, Junction-to-Case 1.0 C/W JC R * Thermal Resistance, Junction-to-Ambient* 40 C/W JA R Thermal Resistance, Junction-to-Ambient 62.5 C/W JA * When mounted on the minimum pad size recommended (PCB Mount) 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCB11N60 Rev. A3FCB11N60 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 2 FCB11N60 FCB11N60 D -PAK 330mm 24m 800 Electrical Characteristics T = 25C unless otherwise noted C Symbol Parameter Conditions Min Typ Max Units Off Characteristics BV Drain-Source Breakdown Voltage V = 0V, I = 250 A, T = 25C 600 -- -- V DSS GS D J V = 0V, I = 250 A, T = 150C-- 650 -- V GS D J BV Breakdown Voltage Temperature DSS I = 250 A, Referenced to 25C-- 0.6 --V/C D / T Coefficient J BV Drain-Source Avalanche Breakdown DS V = 0V, I = 11A -- 700 -- V GS D Voltage I Zero Gate Voltage Drain Current V = 600V, V = 0V -- -- 1 A DSS DS GS V = 480V, T = 125C -- -- 10 A DS C I Gate-Body Leakage Current, Forward V = 30V, V = 0V -- -- 100 nA GSSF GS DS I Gate-Body Leakage Current, Reverse V = -30V, V = 0V -- -- -100 nA GSSR GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250A3.0--5.0V GS(th) DS GS D R Static Drain-Source DS(on) V = 10V, I = 5.5A -- 0.32 0.38 GS D On-Resistance (Note 4) g Forward Transconductance V = 40V, I = 5.5A -- 9.7 -- S FS DS D Dynamic Characteristics C Input Capacitance V = 25V, V = 0V, -- 1148 1490 pF iss DS GS f = 1.0MHz C Output Capacitance -- 671 870 pF oss C Reverse Transfer Capacitance -- 63 -- pF rss C Output Capacitance V = 480V, V = 0V, f = 1.0MHz -- 35 -- pF oss DS GS C eff. Effective Output Capacitance V = 0V to 400V, V = 0V -- 95 -- pF oss DS GS Switching Characteristics t Turn-On Delay Time V = 300V, I = 11A -- 34 80 ns d(on) DD D R = 25 G t Turn-On Rise Time -- 98 205 ns r t Turn-Off Delay Time -- 119 250 ns d(off) (Note 4, 5) t Turn-Off Fall Time -- 56 120 ns f Q Total Gate Charge V = 480V, I = 11A -- 40 52 nC g DS D V = 10V GS Q Gate-Source Charge -- 7.2 -- nC gs Q Gate-Drain Charge (Note 4, 5) -- 21 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 33 A SM V Drain-Source Diode Forward Voltage V = 0V, I = 11A -- -- 1.4 V SD GS S t Reverse Recovery Time V = 0V, I = 11A -- 390 -- ns rr GS S dI /dt =100A/ s (Note 4) F Q Reverse Recovery Charge -- 5.7 -- C rr Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I = 5.51A, V = 50V, R = 25 , Starting T = 25C AS DD G J 3. I 11A, di/dt 200A/ s, V BV , Starting T = 25C SD DD DSS J 4. Pulse Test: Pulse width 300 s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 www.fairchildsemi.com FCB11N60 Rev. A3