Product Information

2N6052G

2N6052G electronic component of ON Semiconductor

Datasheet
Bipolar (BJT) Transistor PNP - Darlington 100 V 12 A 150 W Through Hole TO-204 (TO-3)

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Availability Price Quantity
0 - WHS 1

MOQ : 100
Multiples : 100

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2N6052G
ON Semiconductor

100 : USD 7.1594
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0 - WHS 2

MOQ : 1
Multiples : 1

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2N6052G
ON Semiconductor

1 : USD 17.612
10 : USD 15.3293
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0 - WHS 3

MOQ : 1
Multiples : 1

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2N6052G
ON Semiconductor

1 : USD 13.2415
10 : USD 11.3145
50 : USD 10.5544
100 : USD 8.9781
200 : USD 8.58
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Obsolete
0 - WHS 4

MOQ : 100
Multiples : 100

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2N6052G
ON Semiconductor

100 : USD 4.3424
200 : USD 4.3424
300 : USD 4.3424
400 : USD 4.3424
N/A

Obsolete
0 - WHS 5

MOQ : 100
Multiples : 83

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2N6052G
ON Semiconductor

100 : USD 8.7706
200 : USD 8.3523
400 : USD 8.327
600 : USD 8.3018
800 : USD 8.2765
1000 : USD 8.2513
10000 : USD 8.226
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Obsolete
0 - WHS 6

MOQ : 1
Multiples : 1

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2N6052G
ON Semiconductor

1 : USD 9.6275
10 : USD 8.3556
50 : USD 7.9709
100 : USD 6.9131
600 : USD 6.0156
1000 : USD 5.6737
N/A

Obsolete
0 - WHS 7

MOQ : 81
Multiples : 81

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2N6052G
ON Semiconductor

81 : USD 4.1993
200 : USD 3.8969
500 : USD 3.819
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Obsolete
0 - WHS 8

MOQ : 100
Multiples : 100

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2N6052G
ON Semiconductor

100 : USD 5.3567
200 : USD 5.021
N/A

Obsolete
0 - WHS 9

MOQ : 100
Multiples : 100

Stock Image

2N6052G
ON Semiconductor

100 : USD 4.5243
200 : USD 4.1822
500 : USD 4.0986
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Power Dissipation
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features 2N6052 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) (Note 2) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) (I = 100 mAdc, I = 0) V 100 Vdc C B CEO(sus) Collector Cutoff Current (V = 50 Vdc, I = 0) I 1.0 mAdc CE B CEO Collector Cutoff Current I mAdc CEX (V = Rated V , V = 1.5 Vdc) CE CEO BE(off) 0.5 (V = Rated V , V = 1.5 Vdc, T = 150 C) CE CEO BE(off) C 5.0 Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 2.0 mAdc BE C EBO ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 6.0 Adc, V = 3.0 Vdc) C CE 750 18,000 (I = 12 Adc, V = 3.0 Vdc) C CE 100 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 6.0 Adc, I = 24 mAdc) C B 2.0 (I = 12 Adc, I = 120 mAdc) C B 3.0 BaseEmitter Saturation Voltage (I = 12 Adc, I = 120 mAdc) V 4.0 Vdc C B BE(sat) BaseEmitter On Voltage (I = 6.0 Adc, V = 3.0 Vdc) V 2.8 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS Magnitude of Common Emitter SmallSignal Short Circuit Forward h 4.0 MHz fe Current Transfer Ratio (I = 5.0 Adc, V = 3.0 Vdc, f = 1.0 MHz) C CE Output Capacitance (V = 10 Vdc, I = 0, f = 0.1 MHz) C 500 pF CB E ob SmallSignal Current Gain (I = 5.0 Adc, V = 3.0 Vdc, f = 1.0 kHz) h 300 C CE fe 2. Indicates JEDEC Registered Data. 3. Pulse test: Pulse Width = 300 s, Duty Cycle = 2.0%. V 10 CC R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS B C - 30 V 2N6052 D MUST BE FAST RECOVERY TYPE, eg: 1 5.0 2N6059 1N5825 USED ABOVE I 100 mA B R C SCOPE t MSD6100 USED BELOW I 100 mA s B TUT 2.0 V 2 R B t approx f + 8.0 V 1.0 D 1 5.0 k 51 50 0 t r 0.5 V 1 + 4.0 V approx V = 30 V CC t V = 0 - 8.0 V d BE(off) 25 s for t and t , D is disconnected I /I = 250 d r 1 C B 0.2 and V = 0 2 I = I B1 B2 t , t 10 ns r f T = 25C J DUTY CYCLE = 1.0% 0.1 0.2 0.5 1.0 3.0 5.0 10 20 For NPN test circuit reverse diode and voltage polarities. I , COLLECTOR CURRENT (AMP) C Figure 2. Switching Times Test Circuit Figure 3. Switching Times

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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