2N6387G

2N6387, 2N6388 Plastic Medium-Power Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. www.onsemi.com Features High DC Current Gain h = 2500 (Typ) I = 4.0 Adc FE C CollectorEmitter Sustaining Voltage 100 mAdc DARLINGTON NPN SILICON V = 60 Vdc (Min) 2N6387 CEO(sus) POWER TRANSISTORS = 80 Vdc (Min) 2N6388 8 AND 10 AMPERES Low CollectorEmitter Saturation Voltage 65 WATTS, 60 80 VOLTS V = 2.0 Vdc (Max) I CE(sat) C = 5.0 Adc 2N6387, 2N6388 Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors TO220AB Compact Package 4 These Devices are PbFree and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit 1 2 CollectorEmitter Voltage 2N6387 V 60 Vdc CEO 3 2N6388 80 TO220 CollectorBase Voltage 2N6387 V 60 Vdc CB CASE 221A 2N6388 80 STYLE 1 EmitterBase Voltage V 5.0 Vdc EB MARKING DIAGRAM Collector Current Continuous I 10 Adc C Peak 15 Base Current I 250 mAdc B Total Power Dissipation T = 25 C P 65 W C D Derate above 25 C 0.52 W/C 2N638xG Total Power Dissipation T = 25 C P 2.0 W D A AYWW Derate above 25 C 0.016 W/C Operating and Storage Junction, T , T 65 to +150 C J stg Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2N638x = Device Code 1. Indicates JEDEC Registered Data. x = 7 or 8 G = PbFree Package A = Assembly Location THERMAL CHARACTERISTICS Y = Year Characteristics Symbol Max Unit WW = Work Week Thermal Resistance, JunctiontoCase R 1.92 C/W JC ORDERING INFORMATION Thermal Resistance, JunctiontoAmbient 62.5 R C/W JA Device Package Shipping 2N6387G TO220 50 Units / Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please 2N6388G TO220 50 Units / Rail download the ON Semiconductor Soldering and Mounting Techniques (PbFree) Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 15 2N6387/D2N6387, 2N6388 T T A C 4.0 80 3.0 60 T C 2.0 40 T A 1.0 20 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C) Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) (Note 2) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V Vdc CEO(sus) (I = 200 mAdc, I = 0) 2N6387 C B 60 2N6388 80 Collector Cutoff Current I mAdc CEO (V = 60 Vdc, I = 0) 2N6387 CE B 1.0 (V = 80 Vdc, I = 0) 2N6388 CE B 1.0 Collector Cutoff Current I Adc CEX (V = 60 Vdc, V = 1.5 Vdc) 2N6387 CE EB(off) 300 (V 80 Vdc, V = 1.5 Vdc) 2N6388 CE EB(off) 300 (V = 60 Vdc, V = 1.5 Vdc, T = 125 C) 2N6387 CE EB(off) C 3.0 mAdc (V = 80 Vdc, V = 1.5 Vdc, T = 125 C) 2N6388 CE EB(off) C 3.0 Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 5.0 mAdc BE C EBO ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 5.0 Adc, V = 3.0 Vdc) 2N6387, 2N6388 C CE 1000 20,000 (I = 1 0 Adc, V = 3.0 Vdc) 2N6387, 2N6388 C CE 100 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 5.0 Adc, I = 0.01 Adc) 2N6387, 2N6388 C B 2.0 (I = 10 Adc, I = 0.1 Adc) 2N6387, 2N6388 C B 3.0 BaseEmitter On Voltage V Vdc BE(on) (I = 5.0 Adc, V = 3.0 Vdc) 2N6387, 2N6388 C CE 2.8 (I = 10 Adc, V = 3.0 Vdc) 2N6387, 2N6388 C CE 4.5 DYNAMIC CHARACTERISTICS SmallSignal Current Gain (I = 1.0 Adc, V = 5.0 Vdc, f = 1.0 MHz) h 20 C CE test fe Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 200 pF CB E ob SmallSignal Current Gain (I = 1.0 Adc, V = 5.0 Vdc, f = 1.0 kHz) h 1000 C CE fe Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.