Product Information

2ST501T

2ST501T electronic component of STMicroelectronics

Datasheet
Transistors Darlington PWR BIP/S.SIGNAL
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.2655 ea
Line Total: USD 2.27

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1
Multiples : 1

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2ST501T
STMicroelectronics

1 : USD 1.9991
10 : USD 1.7271
100 : USD 1.3879
500 : USD 1.1403
1000 : USD 0.9448
2000 : USD 0.9221

0 - WHS 2


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1

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2ST501T
STMicroelectronics

1 : USD 4.1165
10 : USD 1.5426
25 : USD 1.3981

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Power Dissipation
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

2ST501T HIGH VOLTAGE NPN POWER TRANSISTOR n HIGH VOLTAGE SPECIAL DARLINGTON Figure 1: Package STRUCTURE n VERY RUGGED BIPOLAR TECHNOLOGY n HIGH OPERATION JUNCTION TEMPERATURE n HIGH DC CURRENT GAIN APPLICATIONS 3 n DRIVER FOR SOLENOID, RELAY AND 2 MOTOR 1 TO-220 DESCRIPTION The 2ST501T is a High Voltage NPN silicon transistor in monolithic special Darlington configuration mounted in Jedec TO-220 plastic Figure 2: Internal Schematic Diagram package. Table 1: Order Codes Part Number Marking Package Packaging 2ST501T 2ST501T TO-220 TUBE Table 2: Absolute Maximum Ratings Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 500 V CES BE V Collector-Emitter Voltage (I = 0) 350 V CEO B V Emitter-Base Voltage (I = 0) 5V EBO C I Collector Current 4A C I Collector Peak Current (t < 5ms) 8A CM p I Base Current 0.5 A B I Base Peak Current (t < 5ms) 2.5 A BM p o P 100 W Total Dissipation at T = 25 C tot C T Storage Temperature -65 to 150 C stg T Max. Operating Junction Temperature 150 C J Rev. 1 February 2005 1/62ST501T Table 3: Thermal Data o R Thermal Resistance Junction-Case Max 1.25 thj-case C/W o Table 4: Electrical Characteristics (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off Current V = 500 V 100 mA CES CE (I = 0) 500 mA o E V = 500 V T = 125 C CE case I Collector Cut-off Current V = 350 V 100 mA CEO CE (I = 0) o 500 mA B V = 350 V T = 125 C CE case I Emitter Cut-off Current V = 5 V 10 mA EBO EB (I = 0) C V * Collector-Emitter I = 10 mA L = 10 mH 350 V CEO(sus) C Sustaining Voltage (I = 0 ) B V * Collector-Emitter I = 2 A I = 2 mA 1.5 V CE(sat) C B Saturation Voltage V * Base-Emitter Saturation I = 2 A I = 2 mA 2 V BE(sat) C B Voltage h DC Current Gain I = 2 A V = 2 V 2000 FE C CE INDUCTIVE LOAD V = 12 V V = 250 V CC clamp t Storage Time 15 ms s L = 4 mH I = 2 A C t Fall Time 1.5 ms f I = 20 mA V = -3 V B BE * Pulsed: Pulsed duration = 300 ms, duty cycle 1.5 %. 2/6

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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