Product Information

PSMN2R0-30PL

PSMN2R0-30PL electronic component of NXP

Datasheet
MOSFET,N CH,30V,100A,TO-220AB
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 1.17
10 : USD 1.04
100 : USD 0.8125
500 : USD 0.6695
1000 : USD 0.5304
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
Operating Temperature Min
Operating Temperature Range
Voltage Vgs Max
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Additional Infomation About Product

PSMN2R0-30PL N-channel 30 V 2.1 m logic level MOSFET Rev. 01 24 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switiching Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j I drain current T =25C V =10V 1 - - 100 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 --211 W tot mb dissipation Dynamic characteristics Q gate-drain charge V = 4.5 V I =25A -16 - nC GD GS D V = 12 V see Figure 13 DS Q total gate charge - 55 - nC G(tot) see Figure 14 Static characteristics R drain-source V = 4.5 V I =15A -2 2.8 m DSon GS D on-state resistance T =25C j V =10V I =15A 2 -1.7 2.1 m GS D T = 25 C see Figure 12 j 1 Continuous current is limited by package. 2 Measured 3 mm from package.NXP Semiconductors PSMN2R0-30PL N-channel 30 V 2.1 m logic level MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R0-30PL TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 TO-220AB PSMN2R0-30PL 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 24 June 2009 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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