Product Information

PSMN2R0-30YL,115

PSMN2R0-30YL,115 electronic component of Nexperia

Datasheet
N-Channel 30 V 100A (Tc) 97W (Tc) Surface Mount LFPAK56, Power-SO8
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7499 ea
Line Total: USD 0.75

4781 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

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156 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.7634
10 : USD 0.7481
25 : USD 0.7481
100 : USD 0.7481

4781 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7499
10 : USD 0.7439
1500 : USD 0.6502
9000 : USD 0.5719
24000 : USD 0.5719

156 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 11
Multiples : 1
11 : USD 0.7251

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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Additional Infomation About Product

PSMN2R0-30YL N-channel 30 V 2 m logic level MOSFET in LFPAK Rev. 4 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications Class-D amplifiers Motor control DC-to-DC converters Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage 1 drain current T =25C V =10V --100A I D mb GS see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --97 W tot mb dissipation T junction -55 - 175 C j temperature Static characteristics drain-source V =10V I =15A -1.552 m R DSon GS D on-state T =25C j resistance Dynamic characteristics Q gate-drain charge V =4.5 V I =10A -7.5 -nC GD GS D V =12 V see Figure 14 DS see Figure 15PSMN2R0-30YL Nexperia N-channel 30 V 2 m logic level MOSFET in LFPAK Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V =4.5 V I =10A -30 -nC G(tot) GS D V =12 V see Figure 14 DS Avalanche ruggedness E non-repetitive V =10V T =25C --151mJ DS(AL)S GS j(init) drain-source I =100 A V 30 V D sup avalanche energy R =50 unclamped GS 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R0-30YL LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN2R0-30YL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 4 10 March 2011 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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