Product Information

PSMN2R0-25YLD

PSMN2R0-25YLD electronic component of Nexperia

Datasheet
MOSFET, N-CH, 25V, 100A, SOT-669-4
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7875 ea
Line Total: USD 1.79

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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PSMN2R0-25YLD
Nexperia

1 : USD 1.2715
10 : USD 1.0115
100 : USD 0.7852
500 : USD 0.6655
1000 : USD 0.5212
5000 : USD 0.5067

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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Additional Infomation About Product

PSMN2R0-25YLD N-channel 25 V, 2.09 m, 140 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits 100% Avalanche tested at I = 100 A (AS) Ultra low Q , Q and Q for high system efficiency, especially at higher switching G GD OSS frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Unique SchottkyPlus technology Schottky-like performance with < 1 A leakage at 25 C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package no glue, no wire bonds, qualified to 175 C Wave solderable exposed leads for optimal visual solder inspection 3. Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 25 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 115 W tot mb Scan or click this QR code to view the latest information for this productNXP Semiconductors PSMN2R0-25YLD N-channel 25 V, 2.09 m, 140 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Conditions Min Typ Max Unit T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 25 A T = 25 C - 2.41 2.91 m DSon GS D j resistance Fig. 10 V = 10 V I = 25 A T = 25 C - 1.82 2.09 m GS D j Fig. 10 Dynamic characteristics Q total gate charge I = 25 A V = 12 V V = 10 V - 34.1 - nC G(tot) D DS GS Fig. 12 Fig. 13 I = 25 A V = 12 V V = 4.5 V - 15.7 - nC D DS GS Fig. 12 Fig. 13 I = 0 A V = 0 V V = 10 V - 15.2 - nC D DS GS Q gate-drain charge I = 25 A V = 12 V V = 4.5 V - 3.6 - nC GD D DS GS Fig. 12 Fig. 13 Source-drain diode S softness factor I = 25 A dI /dt = -100 A/s V = 0 V - 1 - S S GS V = 12 V Fig. 16 DS 1 Continuous current is limited by package 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R0-25YLD LFPAK56 Plastic single-ended surface-mounted package SOT669 Power-SO8 (LFPAK56 Power-SO8) 4 leads PSMN2R0-25YLD All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2016. All rights reserved Product data sheet 19 April 2016 2 / 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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