Product Information

BUK9215-55A,118

BUK9215-55A,118 electronic component of NXP

Datasheet
Trans MOSFET N-CH 55V 62A Automotive 3-Pin(2+Tab) DPAK T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

23: USD 1.5392 ea
Line Total: USD 35.4

0 - Global Stock
MOQ: 23  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May


Multiples : 1

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May


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0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May


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Read More Specifications

     
Manufacturer
Product Category
Packaging
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
LoadingGif

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Additional Infomation About Product

BUK9215-55A N-channel TrenchMOS logic level FET 7 April 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 C rating 3. Applications 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current V = 5 V T = 25 C Fig. 2 Fig. 3 1 - - 62 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 115 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 11 13.6 m DSon GS D j resistance V = 4.5 V I = 25 A T = 25 C - - 16.6 m GS D j V = 5 V I = 25 A T = 25 C - 13 15 m GS D j Fig. 11 Fig. 12 Dynamic characteristics Q gate-drain charge V = 5 V I = 25 A V = 44 V - 20 - nC GD GS D DS T = 25 C Fig. 9 jNexperia BUK9215-55A N-channel TrenchMOS logic level FET Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- I = 62 A V 55 V R = 50 - - 211 mJ DS(AL)S D sup GS source avalanche V = 5 V T = 25 C unclamped GS j(init) energy 1 Current is limited by power dissipation chip rating. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 DPAK (SOT428) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9215-55A DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK9215-55A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 7 April 2014 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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