Product Information

BUK9225-55A,118

BUK9225-55A,118 electronic component of Nexperia

Datasheet
N-Channel 55 V 43A (Tc) 94W (Tc) Surface Mount DPAK
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Multiples : 1
N/A

Obsolete
0 - WHS 2


Multiples : 1
N/A

Obsolete
0 - WHS 3


Multiples : 1
N/A

Obsolete
0 - WHS 4

MOQ : 2500
Multiples : 1
2500 : USD 0.6217
2500 : USD 0.6217
2500 : USD 0.6217
2500 : USD 0.6217
5000 : USD 0.6217
10000 : USD 0.6217
N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1
1 : USD 1.8804
10 : USD 0.9315
100 : USD 0.5404
2500 : USD 0.5393
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Additional Infomation About Product

BUK9225-55A N-channel TrenchMOS logic level FET Rev. 02 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage I drain current V =5V T =25C --43 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --94 W tot mb dissipationBUK9225-55A Nexperia N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =4.5 V I =25A --27 m DSon GS D on-state T =25C j resistance V =10V I =25A - 1922m GS D T =25C j V =5V I =25A - 2125m GS D T =25C see Figure 12 j see Figure 13 Avalanche ruggedness E non-repetitive I =43A V 55 V --123mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9225-55A DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK9225-55A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 7 February 2011 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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