X-On Electronics has gained recognition as a prominent supplier of BUK9629-100B,118 mosfet across the USA, India, Europe, Australia, and various other global locations. BUK9629-100B,118 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK9629-100B,118 Nexperia

BUK9629-100B,118 electronic component of Nexperia
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Part No.BUK9629-100B,118
Manufacturer: Nexperia
Category:MOSFET
Description: N-Channel 100 V 46A (Tc) 157W (Tc) Surface Mount D2PAK
Datasheet: BUK9629-100B,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.9639 ea
Line Total: USD 1.96

Availability - 1354
Ships to you between
Fri. 07 Jun to Tue. 11 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3685 - WHS 1


Ships to you between Fri. 07 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 1.5985
10 : USD 1.357
100 : USD 1.1155
800 : USD 0.8315
2400 : USD 0.8222
4800 : USD 0.8176
9600 : USD 0.8165

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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BUK9629-100B N-channel TrenchMOS logic level FET Rev. 02 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source T 25 C T 175 C - - 100 V V DS j j voltage I drain current V =5V T =25C --46 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --157W tot mb dissipation Static characteristics drain-source V =10V I =25A - 2227m R DSon GS D on-state T =25C j resistance V =5V I =25A - 2429m GS D T =25C see Figure 6 j see Figure 7BUK9629-100B Nexperia N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =46A V 100 V --152mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =25A -13 -nC GD GS D V =80 V T =25C DS j see Figure 8 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9629-100B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK9629-100B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 9 February 2011 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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