Product Information

BUK9675-55A,118

BUK9675-55A,118 electronic component of Nexperia

Datasheet
MOSFET TAPE13 PWR-MOS
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2535 ea
Line Total: USD 1.25

2478 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2478 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.2535
10 : USD 1.0419
100 : USD 0.8326
500 : USD 0.8199
800 : USD 0.6072
2400 : USD 0.5807
4800 : USD 0.5807
9600 : USD 0.5589
24800 : USD 0.5577

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

BUK9675-55A N-channel TrenchMOS logic level FET Rev. 2 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage I drain current V =5V T =25C --20 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --62 W tot mb dissipationBUK9675-55A Nexperia N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =4.5 V I =10A --81 m DSon GS D on-state T =25C j resistance V =10V I =10A - 5868m GS D T =25C j V =5V I =10A - 6475m GS D T =25C see Figure 12 j see Figure 13 Avalanche ruggedness E non-repetitive I =12A V 55 V --72 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9675-55A D2PAK plastic single-ended surface-mounted package (D2PAK) SOT404 3 leads (one lead cropped) BUK9675-55A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 8 February 2011 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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