Product Information

BUK9K52-60E,115

BUK9K52-60E,115 electronic component of Nexperia

Datasheet
MOSFET Dual N-channel 60 V 55 mo FET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7416 ea
Line Total: USD 0.74

7559 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5820 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1500
Multiples : 1500
1500 : USD 0.4356

7559 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7416
10 : USD 0.6609
100 : USD 0.5885
500 : USD 0.5185
1000 : USD 0.4295
1500 : USD 0.42
3000 : USD 0.4081
9000 : USD 0.4046

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Additional Infomation About Product

BUK9K52-60E Dual N-channel 60 V, 55 m logic level MOSFET 24 February 2015 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current V = 5 V T = 25 C Fig. 2 - - 16 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 32 W tot mb Static characteristics FET1 and FET2 R drain-source on-state V = 5 V I = 5 A T = 25 C Fig. 12 - 47.3 55 m DSon GS D j resistance Dynamic characteristics FET1 and FET2 Q gate-drain charge I = 5 A V = 48 V V = 5 V - 2.3 - nC GD D DS GS T = 25 C Fig. 14 Fig. 15 jNexperia BUK9K52-60E Dual N-channel 60 V, 55 m logic level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 S1 source1 D1 D1 D2 D2 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 S1 G1 S2 G2 mbk725 6 D2 drain2 1 2 3 4 7 D1 drain1 LFPAK56D (SOT1205) 8 D1 drain1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9K52-60E LFPAK56D Plastic single ended surface mounted package (LFPAK56D) 8 SOT1205 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9K52-60E 95260E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R = 20 k T 25 C T 175 C - 60 V DGR GS j j V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j P total power dissipation T = 25 C Fig. 1 - 32 W tot mb I drain current T = 25 C V = 5 V Fig. 2 - 16 A D mb GS T = 100 C V = 5 V Fig. 2 - 11 A mb GS BUK9K52-60E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 24 February 2015 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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