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BUK98180-100A

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MOSFET, N CH 100V 4.6A SOT223

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5324 ea
Line Total: USD 0.53

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 15 May to Tue. 21 May MOQ : 1 Multiples : 1 BUK98180-100A NXP	1 : USD 0.5324 25 : USD 0.3961 100 : USD 0.3054 250 : USD 0.2616 1000 : USD 0.254

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Additional Infomation About Product

BUK98180-100A N-channel TrenchMOS logic level FET Rev. 03 3 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 150 C - - 100 V DS j j voltage I drain current V =5V T =25C --4.6 A D GS sp see Figure 1 see Figure 3 P total power T =25C see Figure 2 --8 W tot sp dissipation Static characteristics R drain-source V =10V I =5A T =25C - 147 173 m DSon GS D j on-state V =4.5 V I =5A --201m GS D resistance T =25C j V =5V I =5A T =25C -153180m GS D j see Figure 12 see Figure 13 Avalanche ruggedness E non-repetitive I =4A V 100 V --16 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init)BUK98180-100A NXP Semiconductors N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 4 2 D drain 3S source G 4 D drain 132 mbb076 S SOT223 (SC-73) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK98180-100A SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads BUK98180-100A All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 3 June 2010 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category MOSFET MOSFET
Transistor Polarity N Channel N Channel
Packaging Cut Tape Cut Tape
Continuous Drain Current Id 4.6 A 4.6 A
Drain Source Voltage Vds 100 V 100 V
On Resistance Rds On 173 mOhms 173 mOhms
Rds On Test Voltage Vgs 10 V 10 V
Threshold Voltage Vgs 1.5 V 1.5 V
Power Dissipation Pd 8 W 8 W
Transistor Case Style Sot - 223 Sot - 223
No Of Pins 3 3
Operating Temperature Max 150 C 150 C
Msl - -
Svhc No Svhc (15 - Jun - 2015) No Svhc (15 - Jun - 2015)
Current Id Max 4.6 A 4.6 A
Operating Temperature Min - 55 C - 55 C
Operating Temperature Range - 55 C to + 150 C - 55 C to + 150 C
Termination Type Smd Smd
Transistor Type Enhancement Enhancement
Voltage Vds Typ 100 V 100 V
Voltage Vgs Max 10 V 10 V
Voltage Vgs Rds On Measurement 10 V 10 V