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BUK9832-55A,115

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MOSFET TAPE-7 PWR-MOS

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1000: USD 0.3732 ea
Line Total: USD 373.2

0 - Global Stock

MOQ: 1000 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 14 May to Mon. 20 May MOQ : 1000 Multiples : 1 BUK9832-55A,115 NXP	1000 : USD 0.3732 3000 : USD 0.3668

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Additional Infomation About Product

BUK9832-55A N-channel TrenchMOS logic level FET Rev. 02 1 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant 1.3 Applications 12 V and 24 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 150C --55 V DS j j voltage I drain current V =5V T =25C --12 A D GS sp see Figure 1 see Figure 3 P total power T =25C see Figure 2 --8 W tot sp dissipation Static characteristics R drain-source V =4.5 V I =8A --36 m DSon GS D on-state T =25C j resistance V =10V I =8A T = 25 C - 25 29 m GS D j V =5V I =8A T =25C - 2732m GS D j see Figure 12 see Figure 13 Avalanche ruggedness E non-repetitive I =10A V 55 V --100mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init)BUK9832-55A NXP Semiconductors N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 4 2 D drain 3S source G 4 D drain 132 mbb076 S SOT223 (SC-73) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9832-55A SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads BUK9832-55A All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 1 June 2010 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category MOSFET MOSFET
Transistor Polarity N - Channel N - Channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Packaging Reel Reel
Channel Mode Enhancement Enhancement
Configuration Single Dual Drain Single Dual Drain
Package Case SOT - 223 - 3 SOT - 223 - 3
Brand Nxp Semiconductors Nxp Semiconductors
Fall Time 68 ns 68 ns
Id Continuous Drain Current 12 A 12 A
Pd Power Dissipation 8 W 8 W
Rds On Drain Source Resistance 29 mOhms 29 mOhms
Rise Time 125 ns 125 ns
Factory Pack Quantity : 1000 1000
Typical Turn Off Delay Time 64 ns 64 ns
Vds Drain Source Breakdown Voltage 55 V 55 V
Vgs Gate Source Breakdown Voltage 10 V 10 V
Rohs Mouser Y Y