Product Information

BUK9K134-100EX

BUK9K134-100EX electronic component of Nexperia

Datasheet
MOSFET 100V N-CHANNEL LOGIC LEVEL DUA
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.943 ea
Line Total: USD 0.94

7519 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4365 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1500
Multiples : 1500

Stock Image

BUK9K134-100EX
Nexperia

1500 : USD 0.4225
3000 : USD 0.4225
4500 : USD 0.4225
6000 : USD 0.4225
7500 : USD 0.4225

1329 - WHS 2


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

BUK9K134-100EX
Nexperia

1 : USD 0.7998
10 : USD 0.6547
30 : USD 0.5823
100 : USD 0.5096
500 : USD 0.4653
1500 : USD 0.4432

7519 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

BUK9K134-100EX
Nexperia

1 : USD 0.943
10 : USD 0.774
100 : USD 0.6164
500 : USD 0.5325
1000 : USD 0.4853
1500 : USD 0.4335
3000 : USD 0.4025
9000 : USD 0.3956

2910 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1500
Multiples : 1500

Stock Image

BUK9K134-100EX
Nexperia

1500 : USD 0.7303

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Rohs Mouser
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

BUK9K134-100E Dual N-channel 100 V, 159 m logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 5 V T = 25 C Fig. 1 - - 8.5 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 32 W tot mb Static characteristics FET1 and FET2 R drain-source on-state V = 5 V I = 5 A T = 25 C Fig. 11 - 127 159 m DSon GS D j resistance Dynamic characteristics FET1 and FET2 Q gate-drain charge I = 5 A V = 80 V V = 5 V - 3.6 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 jNexperia BUK9K134-100E Dual N-channel 100 V, 159 m logic level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 S1 source1 D1 D1 D2 D2 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 S1 G1 S2 G2 mbk725 6 D2 drain2 1 2 3 4 7 D1 drain1 LFPAK56D (SOT1205) 8 D1 drain1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9K134-100E LFPAK56D Plastic single ended surface mounted package (LFPAK56D) 8 SOT1205 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9K134-100E 913410E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j I drain current T = 25 C V = 5 V Fig. 1 - 8.5 A D mb GS T = 100 C V = 5 V Fig. 1 - 6 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 34 A DM mb p BUK9K134-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 10 December 2013 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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