Product Information

BUK962R8-30B

BUK962R8-30B electronic component of NXP

Datasheet
Trans MOSFET N-CH 30V 237A Automotive 3-Pin(2+Tab) D2PAK
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

9: USD 3.861 ea
Line Total: USD 34.75

0 - Global Stock
MOQ: 9  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Mounting Style
Channel Mode
Id Continuous Drain Current
Pd Power Dissipation
Gate Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain Source On Volt
Rad Hardened
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Additional Infomation About Product

BUK95/962R8-30B TrenchMOS logic level FET Rev. 02 14 October 2002 Product data 1. Product prole 1.1 Description N-channel enhancement mode eld-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK952R8-30B in SOT78 (TO-220AB) 2 BUK962R8-30B in SOT404 (D -PAK). 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications Automotive systems 12 V loads Motors, lamps and solenoids General purpose power switching. 1.4 Quick reference data E 2.3 J R = 2.4 m (typ) DS(AL)S DSon I 75 A P 300 W. D tot 2. Pinning information Table 1: Pinning - SOT78 and SOT404 simplied outlines and symbol Pin Description Simplied outline Symbol 1 gate (g) mb mb 1 2 drain (d) d 3 source (s) mb mounting base, g connected to drain (d) 2 MBB076 s 13 MBK116 MBK106 12 3 2 SOT78 (TO-220AB) SOT404 (D -PAK) 1 It is not possible to make connection to pin 2 of the SOT404 package.BUK95/962R8-30B Philips Semiconductors TrenchMOS logic level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) - 30 V DS V drain-gate voltage (DC) R =20k -30 V DGR GS V gate-source voltage (DC) - 15 V GS 1 I drain current (DC) T =25 C V =5V - 237 A D mb GS Figure 2 and 3 2 -75 A 2 T = 100 C V =5V Figure 2 -75 A mb GS I peak drain current T =25 C pulsed t 10 s - 950 A DM mb p Figure 3 P total power dissipation T =25 C Figure 1 - 300 W tot mb T storage temperature - 55 +175 C stg T junction temperature - 55 +175 C j Source-drain diode 1 I reverse drain current (DC) T =25 C - 237 A DR mb 2 -75 A I peak reverse drain current T =25 C pulsed t 10 s - 950 A DRM mb p Avalanche ruggedness E non-repetitive drain-source avalanche unclamped inductive load I =75A - 2.3 J DS(AL)S D energy V 30 V V =5V R =50 DS GS GS starting T =25 C mb 1 Current is limited by power dissipation chip rating 2 Continuous current is limited by package 9397 750 10273 Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 14 October 2002 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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