Product Information

BUK9237-55A,118

BUK9237-55A,118 electronic component of Nexperia

Datasheet
MOSFET TAPE13 PWR-MOS
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Multiples : 1
N/A

Obsolete
0 - WHS 2


Multiples : 1
N/A

Obsolete
0 - WHS 3


Multiples : 1
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1
1 : USD 1.7603
10 : USD 0.811
100 : USD 0.4627
500 : USD 0.3761
1000 : USD 0.327
2500 : USD 0.2896
5000 : USD 0.2853
10000 : USD 0.2778
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

BUK9237-55A N-channel TrenchMOS logic level FET Rev. 3 9 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage I drain current V =5V T =25C --32 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --77 W tot mb dissipation Static characteristics R drain-source V =10V I =15A - 2833m DSon GS D on-state T =25C j resistance V =5V I =15A - 3137m GS D T =25C see Figure 11 j see Figure 12BUK9237-55A Nexperia N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =32A V 30 V --76 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =15A -9.2 -nC GD GS D V =44 V T =25C DS j see Figure 13 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 1 It is not possible to make connection to pin 2 of the SOT428 package. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9237-55A DPAK plastic single-ended surface-mounted package (DPAK) SOT428 3 leads (one lead cropped) BUK9237-55A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 9 November 2010 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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