Product Information

BUK765R0-100E

BUK765R0-100E electronic component of NXP

Datasheet
MOSFET, N CH, 100V, 120A, D2PAK
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.9127 ea
Line Total: USD 1.91

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 1.9127
25 : USD 1.7842
100 : USD 1.6481
250 : USD 1.5422
500 : USD 1.444

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

BUK765R0-100E N-channel TrenchMOS standard level FET Rev. 2 16 May 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Repetitive avalanche rated True standard level gate with VGS(th) rating of greater than 1V at 175 C 1.3 Applications 12V, 24V and 48V Automotive Start-Stop micro-hybrid applications systems Transmission control Electric and electro-hydraulic power Ultra high performance power steering switching Motors, lamps and solenoid control 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j 1 I drain current V =10V T =25C see Figure 1 - - 120 A D GS mb P total power dissipation T =25C see Figure 2 - - 357 W tot mb Static characteristics R drain-source on-state V =10V I =25A T =25C -3.9 5 m DSon GS D j resistance see Figure 11 Dynamic characteristics Q gate-drain charge V =10V I =25A V =80V -65 -nC GD GS D DS T =25C see Figure 13 see Figure 14 j 1 Continuous current is limited by package. D2PAKBUK765R0-100E NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK765R0-100E D2PAK plastic single-ended surface-mounted package (D2PAK) SOT404 3 leads (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code BUK765R0-100E BUK765R0-100E BUK765R0-100E All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 16 May 2012 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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