Product Information

BUK768R1-100E,118

BUK768R1-100E,118 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET TrenchMOS N-Channel
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

800: USD 0.8955 ea
Line Total: USD 716.4

0 - Global Stock
MOQ: 800  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 800
Multiples : 800
800 : USD 1.0044

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 800
Multiples : 1
800 : USD 0.8955

0 - WHS 3


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 3.973
10 : USD 3.8782
30 : USD 3.8148
100 : USD 3.7515

0 - WHS 4


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 7.2493
10 : USD 2.6201
100 : USD 2.1023

0 - WHS 5


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 3.3923
5 : USD 3.0531
8 : USD 2.2253
20 : USD 2.1033

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Additional Infomation About Product

BUK768R1-100E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with VGS(th) rating of greater than 1V at 175 C 1.3 Applications 12V, 24V and 48V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 10 V T = 25 C Fig. 1 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 263 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 6.4 8.1 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 80 V - 38.6 - nC GD GS D DS T = 25 C Fig. 13 Fig. 14 j 1 Continuous current is limited by package.Nexperia BUK768R1-100E N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK768R1-100E D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code BUK768R1-100E BUK768R1-100E 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage T 175 C DC -20 20 V GS j I drain current T = 25 C V = 10 V Fig. 1 1 - 100 A D mb GS T = 100 C V = 10 V Fig. 1 - 78 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 439 A DM mb p P total power dissipation T = 25 C Fig. 2 - 263 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j BUK768R1-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 5 October 2012 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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